Semiconductor materials can be used as potential barriers to Tunnelling effects. In this study, four semiconductor materials are arranged in various ways to form a quadruple potential structure to analyze the value of the transmission coefficient. The analysis was conducted using the analytical and numerical matrix propagation method using Matlab2018a. The results confirmed that the inverted arrangement produces the same transmission coefficient value for each energy. So that there are 12 kinds of transmission coefficient values generated from 24 arrangements. The semiconductor material composition with the most considerable transmission coefficient value is ADCB and BCDA, which have a value of 0.8087. The variation of the arrangement affects the value of the transmission coefficient so that it can be used as a guideline for selecting the arrangement that produces the most optimum value of the transmission coefficient from various possible arrangements.
Semiconductor materials used as potential barriers in the study are GaAs, GaSb, and AlAs. These materials will be arranged in certain combinations to form triple potential barrier structures and the effect of combinations will be analysed against transmission coefficient values. In this study, the maximum energy of the electron is 1 eV and the matrix propagation method is used where the effect of the combinations structure on transmission coefficient values is numerically analysed using a computational program. The results showed that the structuring potential barrier affects the value of the transmission coefficient. In the uniform barriers arrangements, the value of the transmission coefficient decreases with increasing potential barrier energy. Whereas in the arrangement of different barrier combinations, two opposing combination arrangements have the same transmission coefficient values. Thus, from six combination arrangements, there are three kinds of transmission coefficient values. The maximum transmission coefficient value is 1.000 in the triple potential barrier of GaSb at 0.49 eV. Research on the tunnel effect contributed to the development of electronic and optoelectronic devices such as transistors and lasers.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.