Tunnel Field-Effect Transistors: State-of-the-Art

Abstract

Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs. The lowest measured sub-threshold swings approaches 20 mV/decade, however, the measurements at these lowest values are not based on many points. The highest current at which sub-threshold swing below 60 mV/decade is observed is in the range 1-10 nA/μm. A common approach to TFET characterization is proposed to facilitate future comparisons.INDEX TERMS Band-to-band tunneling, sub-threshold swing, TFET, tunnel field-effect transistor, tunneling.

Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements

“…1) of heterojunctions is a crucial design parameter for Resonant Interband Tunneling Diodes (RITD) for high speed analog applications 1 and Tunneling Field-Effect Transistors (TFET) for ultra low power logic. 2 E g,eff is usually determined from the electron affinities and bandgaps of the bulk materials, 3 or using optical measurements. 4,5 However, there is significant uncertainty on E g,eff , especially for the heterostructure In 0.53 Ga 0.47 As/ GaAs 0.5 Sb 0.5 (InGaAs/GaAsSb, Fig.…”

Ultra-Low-Power Design and Hardware Security Using Emerging Technologies for Internet of Things

“…As MOSFET alternatives, tunneling-based transistor technologies [38,39] have been actively pursued. Among these devices is a double-layer graphene transistor-often referred to as a SymFET [40].…”

Emerging Technology-Based Design of Primitives for Hardware Security

“…As MOSFET alternatives, tunneling-based transistor technologies (e.g., Seabaugh and Zhang [2010] and Lu and Seabaugh [2014]) are being actively investigated by device scientists. Among these devices is a double-layer graphene transistor-often referred to as a SymFET [Zhao et al 2013].…”