Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications

Rani, Asha; DiCamillo, Kyle; Khan, Ashfaque Hossain; Paranjape, Makarand; Zaghloul, Mona

doi:10.3390/s19112551

Cited by 34 publications

(29 citation statements)

References 45 publications

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“…Field-effect mobility of electrons and holes vs. channel thickness for MoTe2 FETs (Rani et al, 2019).…”

Section: Figurementioning

confidence: 99%

“…In the literature, devices produced from TDMS materials show a p-type behavior as they move towards a monolayer. On the other hand, it has been shown that as the number of layers or thickness increases, the material evolves from the p-type behavior first to the ambipolar behavior and then to the n-type behavior for MoS2, which is the natural behavior of the material (Figure 3) (Rani et al, 2019) .…”

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confidence: 99%

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Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Acar

Ertuğrul

2021

Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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This paper mainly focused on one of the recent attractive electronic devices which is the ambipolar field-effect transistor. Ambipolarity has become important for many applications in recent years. Many factors that cause ambipolarity have been reported in the literature. However, the causes of ambipolarity have not been fully investigated so far. In this study, the degree of ambipolarity was determined as a function of the channel thickness for the WS2 FET device. For the WS2 FET device, the ambipolarity starts from a few layers of channel thickness, and then as the thickness increases, the ambipolarity begins to decrease again. It has been observed that as the thickness increases, the degree of ambipolarity approaches zero. The fact that the degree of ambipolarity approaches zero indicates that the WS2 channel exhibits natural n-type behavior and the ambipolarity effect disappears.

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“…Field-effect mobility of electrons and holes vs. channel thickness for MoTe2 FETs (Rani et al, 2019).…”

Section: Figurementioning

confidence: 99%

mentioning

confidence: 99%

Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Acar

Ertuğrul

2021

Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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“…Furthermore, structural and vibrational properties for bare and hydrogen passivated GaN molecules had been computed and compared with the experimental bulk values. Sensors 2020, 20 It is well known that wurtzoids are bundles of capped (3, 0) nanotubes that form the wurtzite phase when they reach nanocrystal or bulk sizes. Abdulsattar et al [76] performed DFT computations and reported that GaN wurtzoids as a representative of GaN nanocrystals are suitable for hydrogen sensing nanostructures.…”

Section: Molecular Simulation Of Gan-based Gas Sensorsmentioning

confidence: 99%

“…Nanostructures are suitable candidates for this type of sensing application. Having a large surface-to-volume ratio, nanostructures such as nanowires, nanorods, nanotubes, nanoparticles and nanobelts favor adsorption of gas molecules on the sensor and thus increase the sensitivity of the device [19][20][21]. The larger interaction between the gas analytes and the sensing surface allows nanostructures to be employed for high performance gas sensing as opposed to their bulk/microstructure counterparts.…”

Section: Introductionmentioning

confidence: 99%

Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review

Khan

Rao

2020

Sensors

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In the last two decades, GaN nanostructures of various forms like nanowires (NWs), nanotubes (NTs), nanofibers (NFs), nanoparticles (NPs) and nanonetworks (NNs) have been reported for gas sensing applications. In this paper, we have reviewed our group’s work and the works published by other groups on the advances in GaN nanostructures-based sensors for detection of gases such as hydrogen (H2), alcohols (R-OH), methane (CH4), benzene and its derivatives, nitric oxide (NO), nitrogen dioxide (NO2), sulfur-dioxide (SO2), ammonia (NH3), hydrogen sulfide (H2S) and carbon dioxide (CO2). The important sensing performance parameters like limit of detection, response/recovery time and operating temperature for different type of sensors have been summarized and tabulated to provide a thorough performance comparison. A novel metric, the product of response time and limit of detection, has been established, to quantify and compare the overall sensing performance of GaN nanostructure-based devices reported so far. According to this metric, it was found that the InGaN/GaN NW-based sensor exhibits superior overall sensing performance for H2 gas sensing, whereas the GaN/(TiO2–Pt) nanowire-nanoclusters (NWNCs)-based sensor is better for ethanol sensing. The GaN/TiO2 NWNC-based sensor is also well suited for TNT sensing. This paper has also reviewed density-functional theory (DFT)-based first principle studies on the interaction between gas molecules and GaN. The implementation of machine learning algorithms on GaN nanostructured sensors and sensor array has been analyzed as well. Finally, gas sensing mechanism on GaN nanostructure-based sensors at room temperature has been discussed.

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“…Although efforts have been made, the problem of cross-sensitivity cannot yet be fully eliminated. This oxide-inherent cross-sensitive issue of a chemiresistive sensor can be resolved by employing several techniques, including a sensor array [6,7] and a field-effect transistor (FET) sensor [8].…”

Section: Introductionmentioning

confidence: 99%

Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature

Khan

Debnath

Motayed

et al. 2021

Sensors

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In this work, a TiO2-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed and implemented to address the well-known cross-sensitive nature of metal oxides. Even though a two-terminal TiO2/GaN chemiresistor is highly sensitive to NO2, it suffers from lack of selectivity toward NO2 and SO2. Here, a Si back gate with C-AlGaN as the gate dielectric was demonstrated as a tunable parameter, which enhances discrimination of these cross-sensitive gases at room temperature (20 °C). Compared to no bias, a back-gate bias resulted in a significant 60% increase in NO2 response, whereas the increase was an insignificant 10% in SO2 response. The differential change in gas response was explained with the help of a band diagram, derived from the energetics of molecular models based on density functional theory (DFT). The device geometries in this work are not optimized and are intended only for proving the concept.

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Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications

Cited by 34 publications

References 45 publications

Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review

Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature

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