Tuning the physical properties of ultrathin transition-metal dichalcogenides <i>via</i> strain engineering

Yan, Yu; Ding, Shuang; Wu, Xiaonan; Zhu, Jian; Feng, Dengman; Yang, Xiaodong; Li, Fangfei

doi:10.1039/d0ra07288e

Cited by 33 publications

(21 citation statements)

References 114 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Furthermore, CA is inexpensive, non-toxic and biodegradable [67], making it a suitable environmentally friendly support. In addition, a related polymer known as CA butyrate has been used as a low-residue alternative to PMMA [154][155][156][157].…”

Section: Other Polymer-assisted Transfermentioning

confidence: 99%

Transfer of large-scale two-dimensional semiconductors: challenges and developments

Watson¹,

Lu²,

Guimarães³

et al. 2021

2D Mater.

113

103

View full text Add to dashboard Cite

Two-dimensional (2D) materials offer opportunities to explore both fundamental science and applications in the limit of atomic thickness. Beyond the prototypical case of graphene, other 2D materials have recently come to the fore. Of particular technological interest are 2D semiconductors, of which the family of materials known as the group-VI transition metal dichalcogenides (TMDs) has attracted much attention. The presence of a bandgap allows for the fabrication of high on-off ratio transistors and optoelectronic devices, as well as valley/spin polarized transport. The technique of chemical vapor deposition (CVD) has produced high-quality and contiguous wafer-scale 2D films, however, they often need to be transferred to arbitrary substrates for further investigation. In this review, the various transfer techniques developed for transferring 2D films will be outlined and compared, with particular emphasis given to CVD-grown TMDs. Each technique suffers undesirable process-related drawbacks such as bubbles, residue or wrinkles, which can degrade device performance by for instance reducing electron mobility. This review aims to address these problems and provide a systematic overview of key methods to characterize and improve the quality of the transferred films and heterostructures. With the maturing technological status of CVD-grown 2D materials, a robust transfer toolbox is vital.

show abstract

Section: Other Polymer-assisted Transfermentioning

confidence: 99%

Transfer of large-scale two-dimensional semiconductors: challenges and developments

Watson¹,

Lu²,

Guimarães³

et al. 2021

2D Mater.

113

103

View full text Add to dashboard Cite

show abstract

“…This opens up the possibility of controlling which valleys form the conduction and valence band edges using external parameters, such as displacement fields from gating and modification of the lattice parameters through strain [56][57][58][59][60][61][62][63] and pressure (the latter of which may be induced by electrostatic attraction between top and back gates).…”

Section: Tuning Aligned Bilayers By Strain Pressure Electric Field and Encapsulationmentioning

confidence: 99%

Multifaceted moiré superlattice physics in twisted WSe2 bilayers

et al. 2021

View full text Add to dashboard Cite

Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo-and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridization across the bilayer. Here, we develop hybrid k • p tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and antiparallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe 2 bilayers, in conjunction with microscopic ab initio calculations, and considering the influence of encapsulation, pressure, and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridization, piezopotentials, and a weak ferroelectric charge transfer between the layers, and it describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley.

show abstract

“…Strain engineering is a common method that has been widely applied to tune the physical properties of 2D-TMDs (Figure 4). In experiment, in-plane strain can be applied by several approaches, such as bending the TMDs prepared on a flexible substrate, introducing winkles and puddles to 2D-TMDs, indending the layer with AFM, substrate thermal expansion, and so on [71][72][73][74][75][76][77][78][79][80][81]. The out-of-plane strain could be applied using diamond anvil cells set up [72,73].…”

Section: Strain Engineeringmentioning

confidence: 99%

“…In experiment, in-plane strain can be applied by several approaches, such as bending the TMDs prepared on a flexible substrate, introducing winkles and puddles to 2D-TMDs, indending the layer with AFM, substrate thermal expansion, and so on [71][72][73][74][75][76][77][78][79][80][81]. The out-of-plane strain could be applied using diamond anvil cells set up [72,73]. One of the most important phenomena is direct-to-indirect band gap transition induced by tensile strain [82][83][84][85][86][87][88] (in the case of WSe 2 , tensile strain induces an indirect-to-direct band gap transition [87,88]).…”

Section: Strain Engineeringmentioning

confidence: 99%

Recent Progress of Two-Dimensional Transition Metal Dichalcogenides for Thermoelectric Applications

et al. 2022

View full text Add to dashboard Cite

Two-dimensional transition metal dichalcogenides (2D-TMDs) have sparked immense interest, resulting from their unique structural, electronic, mechanical, and thermal properties. The band structures, effective mass, electron mobility, valley degeneracy, and the interactions between phonons and heat transport properties in 2D-TMDs can be efficiently tuned via various approaches. Moreover, the interdependent electrical and thermal conductivity can be modulated independently to facilitate the thermoelectric (TE)-based energy conversion process, which enables optimization of TE properties and promising TE applications. This article briefly reviews the recent development of TE properties in 2D-TMDs. First, the advantages of 2D-TMDs for TE applications are introduced. Then, the manipulations of electrical and thermal transport in 2D-TMDs are briefly discussed, including various influencing factors such as thickness effect, structural defects, and mechanical strain. Finally, the recent advances in the study of electrical, thermal transport, and TE properties of 2D-TMDs, TE-related applications, the challenges, and the future prospects in this field are reviewed.

show abstract

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Abstract: Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties.

Cited by 33 publications

References 114 publications

Transfer of large-scale two-dimensional semiconductors: challenges and developments

Transfer of large-scale two-dimensional semiconductors: challenges and developments

Multifaceted moiré superlattice physics in twisted WSe2 bilayers

Recent Progress of Two-Dimensional Transition Metal Dichalcogenides for Thermoelectric Applications

Contact Info

Product

Resources

About