Two-dimensional (2D) materials offer opportunities to explore both fundamental science and applications in the limit of atomic thickness. Beyond the prototypical case of graphene, other 2D materials have recently come to the fore. Of particular technological interest are 2D semiconductors, of which the family of materials known as the group-VI transition metal dichalcogenides (TMDs) has attracted much attention. The presence of a bandgap allows for the fabrication of high on-off ratio transistors and optoelectronic devices, as well as valley/spin polarized transport. The technique of chemical vapor deposition (CVD) has produced high-quality and contiguous wafer-scale 2D films, however, they often need to be transferred to arbitrary substrates for further investigation. In this review, the various transfer techniques developed for transferring 2D films will be outlined and compared, with particular emphasis given to CVD-grown TMDs. Each technique suffers undesirable process-related drawbacks such as bubbles, residue or wrinkles, which can degrade device performance by for instance reducing electron mobility. This review aims to address these problems and provide a systematic overview of key methods to characterize and improve the quality of the transferred films and heterostructures. With the maturing technological status of CVD-grown 2D materials, a robust transfer toolbox is vital.

Sr(Cr1‐xFex)O3‐y perovskites (0.2 ≤ x ≤ 0.8) are prepared by solid state reaction of stoichiometric mixtures of SrCO3, Fe2O3, and Cr2O3 (argon atmosphere, 1200 °C, 24 h, quenching in liquid N2).

The ability to tune magnetic ordering in complex oxide based correlated antiferromagnetic insulators, due to the coupling between the charge, spin, lattice, and orbital degrees of freedom, opens a vast playground in spintronics. Here, we study a tensile strain induced coexistence of a wide range of magnetic ordering, as established from the temperature dependence of the spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) studies and complemented by structural and bulk magnetization measurements. The temperature dependence of the SMR, SSE, and bulk magnetization studies fingerprints the competition between different magnetic domains across the manganite film thickness. Our work demonstrates that strain induced spatial variation of magnetization in such nominal antiferromagnetic manganite, SrMnO 3 , can be tuned by orbital ordering and opens research opportunities in antiferromagnetic spintronics.

0.4 ≤ x ≤ 0.6) Perovskites. -Sr(Cr1-xFex)O3-y perovskites (0.2 ≤ x ≤ 0.8) are prepared by solid state reaction of stoichiometric mixtures of SrCO3, Fe2O3, and Cr2O3 (argon atmosphere, 1200°C, 24 h, quenching in liquid N2). 15-Layer rhombohedral (15R) SrCrO2.8-type superstructures are discovered in Sr(Cr1-xFex)O3-y perovskites between 0.4 ≤ x ≤ 0.6 (space group R3m, powder XRD). Cr/Fe cations are segregated between layers of tetrahedrally and octahedrally coordinated sites. The 15R-Sr(Cr1-xFex)O3-y materials are semiconducting and order ferrimagnetically below 225-342 K. The magnetic structure of an x = 0.5 sample shows spin canting consistent with a simple spin disorder model. Samples with x ≥ 0.7 have a disordered cubic perovskite structure. -(AREVALO-LOPEZ, A. M.; SHER, F.; FARNHAM, J.; WATSON, A. J.; ATTFIELD*, J. P.; Chem. Mater. 25 (2013) 11, 2346-2351, http://dx.doi.org/10.1021/cm401062u ; Cent. Sci. Extreme Cond., Sch. Chem., Univ. Edinburgh, Edinburgh EH9 3JZ, UK; Eng.) -J. Schramke 35-012

Tunability of magnetic anisotropy in perovskite oxides, such as in SrRuO3, is commonly achieved by controlling the octahedral distortion through strain. Here, we demonstrate that differences in the oxygen vacancies at the heterointerface of SrMnO3/SrRuO3 can also strongly influence the magnetocrystalline anisotropy in SrRuO3 despite being fully strained by the underlying substrate. Modification of the spin–orbit coupling strength by altering the hybridization of Ru-4d and O-2p orbitals in SrRuO3 leads to a clear evolution of the magnetocrystalline anisotropy from multiaxial to strongly out-of-plane, as manifested in the magneto-transport studies. Our results provide an alternative design strategy for their incorporation in practical spintronic devices for memory and computing applications and operation by spin–transfer and spin–orbit torques.