Transfer of large-scale two-dimensional semiconductors: challenges and developments

Abstract

Two-dimensional (2D) materials offer opportunities to explore both fundamental science and applications in the limit of atomic thickness. Beyond the prototypical case of graphene, other 2D materials have recently come to the fore. Of particular technological interest are 2D semiconductors, of which the family of materials known as the group-VI transition metal dichalcogenides (TMDs) has attracted much attention. The presence of a bandgap allows for the fabrication of high on-off ratio transistors and optoelectronic devices, as well as valley/spin polarized transport. The technique of chemical vapor deposition (CVD) has produced high-quality and contiguous wafer-scale 2D films, however, they often need to be transferred to arbitrary substrates for further investigation. In this review, the various transfer techniques developed for transferring 2D films will be outlined and compared, with particular emphasis given to CVD-grown TMDs. Each technique suffers undesirable process-related drawbacks such as bubbles, residue or wrinkles, which can degrade device performance by for instance reducing electron mobility. This review aims to address these problems and provide a systematic overview of key methods to characterize and improve the quality of the transferred films and heterostructures. With the maturing technological status of CVD-grown 2D materials, a robust transfer toolbox is vital.

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

“…In particular, the adoption of crystalline substrates (such as sapphire, GaN, and 4H-SiC) with the hexagonal basal plane and good lattice matching with MoS 2 is expected to enhance the domain size and electronic quality of the grown films. Furthermore, the homogeneous large area few-layer MoS 2 can be transferred to arbitrary substrates (including flexible ones) [68] and find applications in different fields of microelectronics, flexible electronics, and sensing.…”

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

“…Further, the other underexplored challenge is the direct growth of high-quality single crystal 2D material on silicon devices that would require very high processing temperatures, which is not feasible. Although, CVD can enable largearea synthesis of 2D materials, the usual wet and dry methods of transferring CVD grown 2D materials onto device substrate do not currently meet the high-quality standards set by the semiconductor industry [196][197][198]. Recently Kim et al [199] have demonstrated the damage free transfer of graphene and MoS 2 by minimizing the instability-induced damage mechanism using optimal thickness of PDMS layer.…”

Исследование ван-дер-ваальсовых кристаллов GaSe и GaS-=SUB=-x-=/SUB=-Se-=SUB=-1-x-=/SUB=- методом фотоотражения

“…Исследование графеноподобных полупроводниковых кристаллов является одним из актуальных направлений в области современных материалов электронной техники [1][2][3][4][5]. К числу таких полупроводников относится моноселенид галлия (GaSe), состоящий из тетраслоев, внутри которых атомные слои в порядке Se-Ga-Ga-Se связаны ковалентно, в то время как отдельные тетраслои между собой связаны слабыми силами ван-дер-Ваальса.…”