2017
DOI: 10.1364/ol.42.000715
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Tuning of near-infrared-to-near-infrared luminescence from one-photon to two-photon anti-Stokes shift in Ca_3Ga_2- _xCr_xGe_3O_12 via varying Cr^3+ content

Abstract: Near-infrared-to-near-infrared (NIR-to-NIR) anti-Stokes luminescence from Cr3+ singly doped Ca3Ga2Ge3O12 (CGGG) occurs under the excitation of an 808 nm diode laser. The anti-Stokes processes vary from one photon to two photon, depending on the Cr3+ content (x) in Ca3Ga2-xCrxGe3O12. The results suggest that phonon-assisted anti-Stokes excitation and cooperative energy transfer are involved i… Show more

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Cited by 5 publications
(2 citation statements)
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“…Compared to the lanthanide ions (Nd 3+ , Yb 3+ , Er 3+ , Tm 3+ ), Cr 3+ ion can be served as a preferable NIR emitter, because it has a broadband absorption in the visible region (well matched with the blue‐emitting chips), and an intense sharp‐line emission (typically located around 690 nm) from the 2 E→ 4 A 2 transition in a strong crystal field, or a broadband emission from the 4 T 2g (4 F)→ 4 A 2 transition in a weak crystal field 12–18 . Thus, seeking for efficient Cr 3+ ‐doped broadband NIR phosphors has become a hot topic in the field of luminescent materials 19–27 .…”
Section: Introductionmentioning
confidence: 99%
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“…Compared to the lanthanide ions (Nd 3+ , Yb 3+ , Er 3+ , Tm 3+ ), Cr 3+ ion can be served as a preferable NIR emitter, because it has a broadband absorption in the visible region (well matched with the blue‐emitting chips), and an intense sharp‐line emission (typically located around 690 nm) from the 2 E→ 4 A 2 transition in a strong crystal field, or a broadband emission from the 4 T 2g (4 F)→ 4 A 2 transition in a weak crystal field 12–18 . Thus, seeking for efficient Cr 3+ ‐doped broadband NIR phosphors has become a hot topic in the field of luminescent materials 19–27 .…”
Section: Introductionmentioning
confidence: 99%
“…10,11 Compared to the lanthanide ions (Nd 3+ , Yb 3+ , Er 3+ , Tm 3+ ), Cr 3+ ion can be served as a preferable NIR emitter, because it has a broadband absorption in the visible region (well matched with the blue-emitting chips), and an intense sharp-line emission (typically located around 690 nm) from the 2 E→ 4 A 2 transition in a strong crystal field, or a broadband emission from the 4 T 2g (4 F)→ 4 A 2 transition in a weak crystal field. [12][13][14][15][16][17][18] Thus, seeking for efficient Cr 3+ -doped broadband NIR phosphors has become a hot topic in the field of luminescent materials. [19][20][21][22][23][24][25][26][27] Until now a great progress has been made for the phosphors with emission peak wavelength less than 850 nm, which have a high internal and/or external quantum efficiency (IQE/EQE), superior thermal resistance quenching, and striking electro-optical efficiency.…”
Section: Introductionmentioning
confidence: 99%