Tunable Ultrafast Nonlinear Optical Properties of Graphene/MoS<sub>2</sub> van der Waals Heterostructures and Their Application in Solid-State Bulk Lasers

Sun, Xiaoli; Zhang, Baitao; Li, Yanlu; Luo, Xingyun; Li, Guoru; Chen, Yanxue; Zhang, Chengqian; He, Jingliang

doi:10.1021/acsnano.8b06236

Cited by 125 publications

(58 citation statements)

References 51 publications

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“…This charge transfer can be used to understand the optical physics process and improve the electron transfer efficiency in vdW heterostructures such as Bi 2 Te 3 / FeTe 2 [47] and Graphene/MoS 2 . [7]…”

Section: Mechanism For Improved Nlo Properties Of Bi 2 S 3 /Res 2 Filmmentioning

confidence: 99%

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Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Luo

Yang

et al. 2021

Adv Materials Inter

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and modulation depth (MoS 2 ≈ 12.7%) [7] in the early time. Different from group-VI TMDs, ReS 2 as a group-VII TMDs is a direct bandgap (≈1.5 eV) semiconductor in both monolayer and bulk crystal. [8] Meanwhile, ReS 2 demonstrates high stability, reasonable carrier mobility (≈30 cm 2 •V −1 s −1 ), [9] and high current on/ off ratio (≈10 6 ). [8] However, ReS 2 shows poor NLO response such as low SA coefficients (−5.99 cm GW −1 ) [1] and modulation depth (≈3%), [10] which severely hinders its application in ultrafast laser. [6,11] Recently, some 2D ReS 2 based van der Waals (vdW) heterostructures such as ReS 2 /MoS 2 , [12] ReS 2 /ReSe 2 , [13] ReS 2 /WSe 2 , [14] and ReS 2 / Graphene [15] have been constructed to improve linear optoelectronic devices [16] such as photodetectors, field-effect transistors, and solar cells, owing to their synergistic effect in the heterostructures. However, few NLO experiments have been demonstrated in ReS 2 based heterostructures. The influence of band alignment on NLO response still need to be unveiled.Bi 2 S 3 can be an elementary component for vdW heterostructure due to its high figure of merit (FOM ≈6.17 × 10 −14 esu cm), [17] environmental stability, excellent absorption coefficient (≈10 5 cm −1 ), [18] and tunable bandgap (from 1.28 to 1.84 eV [19][20] ). Furthermore, Bi 2 S 3 demonstrates relatively high SA coefficient (−63.38 cm GW −1 ) [17] and modulation depth (≈5.7%). [21] Complementarity in Bi 2 S 3 and ReS 2 would promise the heterostructure of Bi 2 S 3 and ReS 2 for "one plus one greater than two" NLO properties. Unlike traditional bonded heterostructures, these 2D vdW heterostructures can be easily integrated without lattice-matching limitation. [22] However, most vdW heterostructures are constructed by mechanical stacking or physical transfer process, which are not scalable for practical applications. [23] Besides, early methods may result in uncontrollable stacking orientation and unavoidable contamination in the transfer process. [24] Some recent reports of two-step vdW vapor epitaxial growth provide an opportunity towards scalable integration of 2D materials. [25,26] Importantly, the vdW vapor epitaxial growth shows the advantages: (I) efficient control in size and convenient growth in scale; (II) atomic uniformity at the interface; (III) layer-by-layer formation without alloys; (IV) compatibility with the current industrial technology. Even though Sb 2 Se 3 /WS 2 , [27] Bi 2 S 3 /MoS 2 , [28] and SnSe 2 /MoS 2 [24] have been successfully demonstrated by vdW vapor epitaxial growth, there is no report on the Bi 2 S 3 /ReS 2 , to our best knowledge. 2D van der Waals (vdW) heterostructure provides a novel platform to modulate linear and nonlinear optical (NLO) properties for optical devices by interface engineering. However, NLO properties and mechanisms based on vdW heterostructures are far from complete understanding. Herein, two-step vdW vapor epitaxial growth by either physical or chemical vapor deposition methods is successfully demonstrated to synthesize unifor...

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Section: Mechanism For Improved Nlo Properties Of Bi 2 S 3 /Res 2 Filmmentioning

confidence: 99%

“…

and modulation depth (MoS 2 ≈ 12.7%) [7] in the early time. Different from group-VI TMDs, ReS 2 as a group-VII TMDs is a direct bandgap (≈1.5 eV) semiconductor in both monolayer and bulk crystal.

…”

mentioning

confidence: 96%

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Luo

Yang

et al. 2021

Adv Materials Inter

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“…If the photon energy of incident light is larger than bandgap, linear absorption will occur and the electrons can be excited from valence band (VB) into the conduction band (CB). [ 31 ] Shortly, the nonequilibrium carrier distribution broadens and also equilibrates with the intraband carrier population through carrier–carrier scattering. After self‐thermalization, the energy of the heated carrier gas would be transferred to the lattice via carrier–phonon interactions over a picosecond or even femtoseconds timescale.…”

Section: Resultsmentioning

confidence: 99%

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

Zhang

et al. 2020

Physica Status Solidi (a)

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The lack of high-quality gallium nitride (GaN) wafers may be a non-negligible bottleneck restricting the development of GaN-based devices. Although various processing methods have been used to reduce dislocation density, there is still plenty of room for the reduction of stress in GaN crystal. Herein, laser decomposition is verified as an efficient technique to reduce the interfacial stress in GaN-sapphire and improve the lateral epitaxial growth quality of GaN crystal. The variation of the stress on surface and at a depth of 2 μm by controlling the incident pulse energy is systematically studied and the physical mechanism of laser decomposition process is discussed. As the incident energy increases, the stress is weakened within a certain range. Experimental evidences of the good growth quality are displayed by the investigation of high-resolution X-ray diffraction, electron backscattered diffraction, and photoluminescence. Furthermore, high-quality UV photodetectors based on the as-obtained GaN are fabricated successfully, which show a strong photocurrent response and excellent stability. This work may pave a way towards improving crystal growth and provides a new insight for tuning interface stress so as to develop desired devices.

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“…Among these, they exhibit superior optical, electrical, and chemical properties to graphene; thus, the graphene/MoS 2 nanocomposites have been extensively studied (Fu et al, 2014;Yu et al, 2014;Kwon and Kim, 2018). Compared with graphene, the graphene/MoS 2 nanocomposites exhibit higher photoresponse (Zhang et al, 2014), higher dielectric constant, and higher linear absorption (Jiang et al, 2015;He et al, 2017;Qiu et al, 2018;Sun et al, 2018;Xu et al, 2020) due to the excellent properties of the graphene/MoS 2 ; the graphene/MoS 2 nanocomposites can be widely used in the manufacture of dyesensitized solar cells, electrical sensors, and transistors (Liu et al, 2012;Huang et al, 2013;He et al, 2014). In the field of nonlinear optics, the reverse saturable absorption (RSA) property, which is shown by graphene/MoS 2 thin film, shows that the light transmittance decreases with the increase of incident light (Ouyang et al, 2013), and it can be widely used in all optical switches, optical sensors, and other fields (Vabbina et al, 2015;Chen et al, 2016;Iqbal et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

The Broadband Nonlinear Optical Response in Graphene/MoS2/Ag Thin Films at Near Infrared

et al. 2021

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Graphene/MoS2/Ag thin films were successfully prepared by the magnetron sputtering technique and liquid phase exfoliation. Structure, morphology, optical properties, and nonlinear optical characteristics of the graphene/MoS2/Ag and graphene/MoS2 thin films were studied by X-ray diffractometer, spectrophotometer, field-scanning electron microscope, and femtosecond (fs) Z-scan technique. The results of the fs Z-scan experiment indicate that the graphene/MoS2/Ag thin films exhibit reverse saturable absorption properties due to the free carrier absorption and two-photon absorption. More importantly, with the increase of DC magnetron sputtering power (from 5 to 15 W), the local surface plasmon resonance effect of the Ag thin films increases, which leads to the enhancement of nonlinear optical properties of the graphene/MoS2/Ag thin films. The nonlinear absorption coefficients of the graphene/MoS2/Ag thin films are increased from 1.14 × 10–10 to 1.8 × 10–10 m/W at 800 nm and from 4.79 × 10–11 to 6.79 × 10–11 m/W at 1,030 nm, and the nonlinear refraction index of the graphene/MoS2/Ag thin films is -4.37 × 10–17∼−4.18 × 10–16 m2/W under the excitation of 800 and 1,030 nm, respectively. Moreover, when the graphene/MoS2/Ag thin films were excited at 800 and 1,030 nm, respectively, the nonlinear figure of merit values of the graphene/MoS2/Ag thin films are increased from 1.23 to 2.91 and from 1.30 to 1.47, which are enough to support the application of the graphene/MoS2/Ag thin films in the field of all-optical switching applications.

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Tunable Ultrafast Nonlinear Optical Properties of Graphene/MoS₂ van der Waals Heterostructures and Their Application in Solid-State Bulk Lasers

Cited by 125 publications

References 51 publications

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

The Broadband Nonlinear Optical Response in Graphene/MoS2/Ag Thin Films at Near Infrared

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Tunable Ultrafast Nonlinear Optical Properties of Graphene/MoS2 van der Waals Heterostructures and Their Application in Solid-State Bulk Lasers

Cited by 125 publications

References 51 publications

Facile Two‐Step van der Waals Epitaxial Growth of Bi2S3/ReS2 Heterostructure with Improved Saturable Absorption

Facile Two‐Step van der Waals Epitaxial Growth of Bi2S3/ReS2 Heterostructure with Improved Saturable Absorption

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

The Broadband Nonlinear Optical Response in Graphene/MoS2/Ag Thin Films at Near Infrared

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Tunable Ultrafast Nonlinear Optical Properties of Graphene/MoS₂ van der Waals Heterostructures and Their Application in Solid-State Bulk Lasers

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption