Abstract:A spintronic device based on the spin-dependent Hall effect has attracted great interest because of its great potential applications in the multivalue storage and logic gate, which is a promising candidate to break the bottleneck of the information industry in the big data period. It is a technological challenge to implant spintronic devices into semiconductor integrated circuits. The anomalous Hall angle (θ), defined as the deviation of the electron flow from the current direction, is the key parameter to eva… Show more
“…4 (b)). Although θAHE was small in all samples (< 5%) 36 , MIS exhibited the largest value, approximately 2.6%, at room temperature. Then, θAHE decreased in the following order: SIS15, DCS, AIS, SIS5, and SIS10.…”
“…4 (b)). Although θAHE was small in all samples (< 5%) 36 , MIS exhibited the largest value, approximately 2.6%, at room temperature. Then, θAHE decreased in the following order: SIS15, DCS, AIS, SIS5, and SIS10.…”
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