Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi<sub>2</sub>O<sub>2</sub>Se‐Based Three‐Terminal Memristor

Zhang, Ziyang; Li, Tianran; Wu, Yujie; Jia, Yinjun; Tan, Congwei; Xu, Xintong; Wang, Guanrui; Lv, Juan; Zhang, Wei; He, Yuhan; Pei, Jing; Ma, Cheng; Li, Guoqi; Xu, Haitao; Shi, Luping; Peng, Hailin; Li, Huanglong

doi:10.1002/adma.201805769

Cited by 89 publications

(75 citation statements)

References 55 publications

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“…[1][2][3] Bismuth oxyselenide (Bi 2 O 2 Se), a semiconducting 2D material featured by narrow bandgap (≈0.8 eV), high electronic mobility (20 000 cm 2 V −1 s −1 at 2 K), and good air stability, shows great potential for applications in high-performance electronics, optoelectronics, and flexible devices. [4][5][6][7][8][9][10] For example, the photodetectors based on Bi 2 O 2 Se with ultrabroadband responses, [7] high on/off ratio, and ultrahigh photodetectivity [8] have been demonstrated. Bi 2 O 2 Se is also an important material to fabricate three-terminal memristors with high speed and low energy consumption for neuromorphic functions.…”

Section: Introductionmentioning

confidence: 99%

High‐Fidelity Transfer of 2D Bi₂O₂Se and Its Mechanical Properties

Feng

Ding

et al. 2020

Adv Funct Materials

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2D bismuth oxyselenide (Bi 2 O 2 Se) with high electron mobility is advantageous in future high-performance and flexible electronic and optoelectronic devices. However, transfer of thin Bi 2 O 2 Se flakes is rather challenging, restricting measurements of its mechanical properties and application exploration in flexible devices. Here, a reliable and effective polydimethylsiloxane (PDMS)-mediated method that allows transferring thin Bi 2 O 2 Se flakes from grown substrates onto target substrates like microelectromechanical system substrates is developed. The high fidelity of the transferred thin flakes stems from the high adhesive energy and flexibility of PDMS film. For the first time, the mechanical properties of 2D Bi 2 O 2 Se are experimentally acquired with a nanoindentation method. It is found that few-layer Bi 2 O 2 Se exhibits a large intrinsic stiffness of 18-23 GPa among 2D semiconductors, and a Young's modulus of 88.7 ± 14.4 GPa, which is consistent with the theoretical values. Furthermore, few-layer Bi 2 O 2 Se can withstand a high radial strain of more than 3%, demonstrating excellent flexibility. The development of the reliable transfer method and documentation of mechanical properties of 2D Bi 2 O 2 Se jointly fill the gap between theoretical prediction and experimental verification of mechanical properties of this emerging material, and will promote flexible electronics and optoelectronics based on 2D Bi 2 O 2 Se.

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Section: Introductionmentioning

confidence: 99%

High‐Fidelity Transfer of 2D Bi₂O₂Se and Its Mechanical Properties

Feng

Ding

et al. 2020

Adv Funct Materials

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“…Applying a positive V tg pulse causes O 2− migration from top dielectric layer (AlO x ) toward top gate electrode. Zhang et al demonstrated a Bi 2 O 2 Se-based synaptic device (Figure 8b) [70] with top gate as presynaptic terminal. The role of V bg in controlling device behaviors assembles that of neuromodulator (chemical messages to change activity of synapses) in synaptic plasticity transition between excitatory to inhibitory.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…[86] The use of wide bandgap (PEA) 2 PbBr 4 (40 nm) reduces the operating current down to ≈pA. [70] Copyright 2019, John Wiley & Sons, Inc. e,f) Reproduced with permission. Cascading multiple memristive devices together though sharing electrodes allows for the independent formation and breaking of filaments in different active layers of different devices.…”

Section: Vertical Devicesmentioning

confidence: 99%

“…Memristive devices relying on charge-trapping effect [64][65][66][67][68][69][70] at the interface are not suitable for development of robust devices, as it is difficult to control the trapping/detrapping process in a reliable way. The unique physical properties that 2D layered materials and vdW heterostructure possess have not been fully exploited for designing neuromorphic devices with new working principles.…”

Section: Introductionmentioning

confidence: 99%

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2D Layered Materials for Memristive and Neuromorphic Applications

Wang

Meng

et al. 2019

Adv Elect Materials

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demonstrated that the memristive devices exhibit many promising features, [3][4][5][6][7][8] such as non-volatility, high speed switching, high endurance, high-density integration, CMOS-compatible fabrication, and so on. These features make them ideal candidates for applications in memory devices, [3,5,9] in-memory computing, [3,[10][11][12] and edge computing. [13,14] The working principle of the TMOs-based memristive devices relies on ion drift or diffusion, which resembles motion of ions in the biological neurons and synapses. The ionic motions exhibit dynamic behaviors. Thus, the memristive devices can be used to emulate the synaptic plasticity [15] and neurons. [16][17][18] Compared to traditional silicon synapses [19][20][21] and neurons [22,23] requiring complex circuits, such emerging memristive devices have compact structures and enhanced func-

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“…Then, for the first time, the intrinsic thermal properties of 2D Bi 2 O 2 Se were revealed (about 1 W · m −1 · k −1 ). Li's group firstly used 2D Bi 2 O 2 Se for memristors [179]. In their report, truly concomitant shortterm and long-term plasticities were firstly demonstrated, opening up the prospects for ultrathin, high-speed and low-power neuromorphic devices.…”

Section: Bi 2 O 2 Sementioning

confidence: 99%

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

et al. 2020

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Abstract Two-dimensional (2D) materials have undergone a rapid development toward real applications since the discovery of graphene. At first, graphene is a star material because of the ultrahigh mobility and novel physics, but it always suffered from zero bandgap and limited device application. Then, 2D binary compounds such as transition-metal chalcogenides emerged as complementary materials for graphene due to their sizable bandgap and moderate electrical properties. Recently, research interests have turned to monoelemental and ternary 2D materials. Among them, monoelemental 2D materials such as arsenic (As), antimony (Sb), bismuth (Bi), tellurium (Te), etc., have been the focus. For example, bismuthene can act as a 2D topological insulator with nontrivial topological edge states and high bulk gap, providing the novel platforms to realize the quantum spin-Hall systems. Meanwhile, ternary 2D materials such as Bi2O2Se, BiOX and CrOX (X=Cl, Br, I) have also emerged as promising candidates in optoelectronics and spintronics due to their extraordinary mobility, favorable band structures and intrinsic ferromagnetism with high Curie temperature. In this review, we will discuss the recent works and future prospects on the emerging monoelemental and ternary materials in terms of their structure, growth, physics and device applications.

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Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi₂O₂Se‐Based Three‐Terminal Memristor

Cited by 89 publications

References 55 publications

High‐Fidelity Transfer of 2D Bi₂O₂Se and Its Mechanical Properties

High‐Fidelity Transfer of 2D Bi₂O₂Se and Its Mechanical Properties

2D Layered Materials for Memristive and Neuromorphic Applications

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

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Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor

Cited by 89 publications

References 55 publications

High‐Fidelity Transfer of 2D Bi2O2Se and Its Mechanical Properties

High‐Fidelity Transfer of 2D Bi2O2Se and Its Mechanical Properties

2D Layered Materials for Memristive and Neuromorphic Applications

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

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Product

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Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi₂O₂Se‐Based Three‐Terminal Memristor

High‐Fidelity Transfer of 2D Bi₂O₂Se and Its Mechanical Properties

High‐Fidelity Transfer of 2D Bi₂O₂Se and Its Mechanical Properties