True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

Skierbiszewski, C.; Muzioł, G.; Nowakowski-Szkudlarek, Krzesimir; Turski, Henryk; Siekacz, M.; Feduniewicz-Żmuda, Anna; Nowakowska-Szkudlarek, Anna; Sawicka, Marta; Perlin, P.

doi:10.7567/apex.11.034103

Cited by 39 publications

(23 citation statements)

References 29 publications

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“…Upper cladding is a 500 nm p-type GaN with Mg doping concentation of 1 × 10 18 cm −3 . This is followed by a TJ [16] capped with GaN:Si contact layer. Two sets of samples were realized with different designs of EBL.…”

Section: Methodsmentioning

confidence: 99%

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Hajdel

Muzioł

Nowakowski-Szkudlarek

et al. 2019

Acta Phys. Pol. A

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We investigate influence of Mg doping concentration and the thickness of electron blocking layer on properties of InGaN-based laser diodes grown by plasma-assisted molecular beam epitaxy. Using simple measurements of light-current characteristics and simulations, two main conclusions are drawn. First one-the Mg dopant is responsible for optical losses, as in the case of the laser diodes grown by metalorganic vapor phase epitaxy. Second one-the low Mg doping causes electrons to overflow through electron blocking layer. Additionally, tunneling is proposed as an escape mechanism of carriers from active region for thin electron blocking layer.

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Section: Methodsmentioning

confidence: 99%

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Hajdel

Muzioł

Nowakowski-Szkudlarek

et al. 2019

Acta Phys. Pol. A

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“…To investigate the effects of using TJ structure [22][23][24][25], and to further analyze the carrier transport and distribution within the MQW active region of the InGaN-based VCSELs, an advanced simulator PICS3D was utilized in this specific study. The PICS3D is based on three-dimensional finite element analysis and can deal with the optical and electrical properties of optoelectronic devices by solving Poisson's equation, current continuity equations, carrier transport equations, complex wave equations, and photon rate equations.…”

Section: Theoretical Modelsmentioning

confidence: 99%

Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Shen

Yeh

et al. 2019

Crystals

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In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

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“…In PAMBE, hydrogen is not incorporated into GaN:Mg layers, therefore there is no passivation of Mg dopant and no need for post-growth annealing. For this reason, PAMBE seems to be much better suited than MOVPE for practical realization of the vertical devices with buried p-type layers [14]. Recently, making use of PAMBE, it was shown that TJs' resistance for wide bandgap semiconductors can be significantly reduced by making use of the piezoelectric fields in the region of the junction [3,7].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, making use of PAMBE, it was shown that TJs' resistance for wide bandgap semiconductors can be significantly reduced by making use of the piezoelectric fields in the region of the junction [3,7]. The use of piezoelectric fields and heavy pand n-type doping levels allowed us to reduce the TJs' resistance to a level appropriate for a demonstration of the continuous wave operation of nitride laser diodes (LDs) [14].…”

Section: Introductionmentioning

confidence: 99%

Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

et al. 2020

Self Cite

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We demonstrate the applications of tunnel junctions (TJs) for new concepts of monolithic nitride-based multicolor light emitting diode (LED) and laser diode (LD) stacks. The presented structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN bulk crystals. We demonstrate a stack of four LDs operated at pulse mode with emission wavelength of 453 nm. The output power of 1.1 W and high slope efficiency of 2.3 W/A is achieved for devices without dielectric mirrors. Atomically flat surface after the epitaxy of four LD stack and low dislocation density is measured as a result of proper TJ design with optimized doping level. The strain compensation design with InGaN waveguides and AlGaN claddings is shown to be crucial to avoid cracking and lattice relaxation of the 5 µm thick structure. Vertical connection of n-LDs allows for cascade emission of photons and increases the quantum efficiency n-times. The two-color (blue and green) LEDs are demonstrated. Application of TJs simplifies device processing, reducing the need for applications of p-type contact. The key factor enabling demonstration of such devices is hydrogen-free PAMBE technology, in which activation of buried p-type layers is not necessary.

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True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

Cited by 39 publications

References 29 publications

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

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