2002
DOI: 10.1063/1.1492012
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Triode field emitter with a gated planar carbon-nanoparticle cathode

Abstract: We fabricated a triode field emitter with a normal gate structure and a planar cathode of carbon nanoparticles (CNPs), which consisted of good quality graphitic sheets encapsulating metal (carbide) cores. For the quantitative analysis of the emission from the CNP triode emitter, we carried out a two-dimensional numerical calculation of electrostatic potential using the finite element method. As it turned out, a radial variation of electric field was very important to account for the emission from a planar emit… Show more

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Cited by 24 publications
(2 citation statements)
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“…Table 1 shows that more detailed device charac- terization has been performed for the present prototype devices than in previous studies; this enables further evaluation of the potential of vacuum microelectronic devices containing nanoemitters. The following important features of the developed prototype devices are also apparent from [22] 675 & 800°C Si Ni/Au array CNT [25] 700°C Si Ni array ZnO [23] 900°C Si Au not reported CNP [26] 680°C Si Ni not reported CNT [27] not reported Si Ni single microcavity grown inside a gate-controlled microstructure have great potential for practical application as electron sources. This is because of advantages such as good emission properties and the feasibility of fabricating devices with large areas at low temperature on glass substrates.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Table 1 shows that more detailed device charac- terization has been performed for the present prototype devices than in previous studies; this enables further evaluation of the potential of vacuum microelectronic devices containing nanoemitters. The following important features of the developed prototype devices are also apparent from [22] 675 & 800°C Si Ni/Au array CNT [25] 700°C Si Ni array ZnO [23] 900°C Si Au not reported CNP [26] 680°C Si Ni not reported CNT [27] not reported Si Ni single microcavity grown inside a gate-controlled microstructure have great potential for practical application as electron sources. This is because of advantages such as good emission properties and the feasibility of fabricating devices with large areas at low temperature on glass substrates.…”
Section: Resultsmentioning
confidence: 99%
“…In applications such as miniaturized microwave devices [4], mass spectrometers [5,6], parallel electron beam lithography [7], and large-panel field emission displays (FEDs) [8][9][10], the vacuum electron sources need to be controlled by microgates to minimize the driving voltage provided by the integrated circuit chip. To achieve this goal, vacuum microdiodes structures have been developed and the Spindt-type microcavity structure is often adapted [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28]. To make use of efficient field electron emission nanomaterials such as carbon nanotubes and nanowires as nanoemitters, various microfabrication techniques have been developed taking into account of the effects of the self-assembly processes of nanotubes and nanowires.…”
mentioning
confidence: 99%