“…Vacuum microelectronic devices, such as X-ray sources [ 1 , 2 , 3 ], photodetectors [ 4 , 5 ] and parallel electron beam lithography [ 6 ], impose high requirements on large-area field emitter arrays (FEAs). One-dimensional (1D) materials are considered ideal candidates for large-area FEAs due to their high aspect ratio and unique properties [ 7 , 8 , 9 , 10 , 11 ]. In particular, ZnO nanowires have the advantages of large-area uniform preparation, low cost and good compatibility with microfabrication techniques, and thus extensive studies have been carried out on the field emission properties of ZnO nanowires [ 12 , 13 , 14 , 15 , 16 , 17 ].…”