Trimethylchlorosilane Treatment of Ultralow Dielectric Constant Material after Photoresist Removal Processing

Abstract

The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O 2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O 2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane ͑TMCS͒ is used to repair the damage to porous silica caused by the O 2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing.

Permanent superhydrophobic polypropylene nanocomposite coatings by a simple one-step dipping process

“…S3 in Supporting information). This was confirmed by the broad intensity band from 700 cm −1 corresponding to Ti O Ti stretching of titanium dioxide, while the 1129 and 1041 cm −1 bands were assigned to stretching vibration of Si O Si and Si O Si bonding [48,49].…”

Repairing plasma-damaged low-k HSQ films with trimethylchlorosilane treatment

“…The contact angle for the as-deposited film is ∼64 • while it decreases to ∼20 • after O 2 plasma exposure. This is because the O 2 plasma causes many of the Si H bonds to break, leaving many dangling bonds in the film [10]. Some of those dangling bonds form Si O bonds and others become Si OH bonds through moisture absorption.…”

“…The possible reasons of the repair of the plasma damage has also been discussed by Chang et al [10]. In their case where they have studied the repair for porous silica (MSQ) by TMCS, the C H bond which was damaged by the plasma got replenished and also the CH 3 from the TMCS got attached to sites generated by the plasma thus rendering the surface more hydrophobic.…”

Electrical Breakdown in Advanced Interconnect Dielectrics

“…The decomposed Si-CH 3 and C-H bonds [168] can form surface silanol (Si−OH) or Si-H bonds [169] and subsequently enable bulk moisture absorption [170,171]. Consequently, porous SiCOH ULK integration requires gentler plasma exposure processes [180,181] and, quite likely, novel methods (such as surface silylation by various means) of localized repair [182][183][184][185][186][187][188][189][190][191] to damaged regions (particularly trench-via sidewalls) of the LKs/ULKs to successfully integrate these materials. Consequently, porous SiCOH ULK integration requires gentler plasma exposure processes [180,181] and, quite likely, novel methods (such as surface silylation by various means) of localized repair [182][183][184][185][186][187][188][189][190][191] to damaged regions (particularly trench-via sidewalls) of the LKs/ULKs to successfully integrate these materials.…”