Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

Abstract

Negative and positive charge trapping in a constant current regime under high-field electron injection both from Al electrode and Si substrate in high-dose Ge+ ion implanted and then rapid thermal annealed thin-film dioxide has been studied. Negatively charged traps as well as generated positive charges with effective capture cross sections of σ1(−)>10−14 cm2, σ2(−)≈1.8×10−15, σ3(−)≈2×10−16, and σ4(−)≈3×10−18 cm2, as well as σ1(+)≈(5–7)×10−15 and σ2(+)≈3.3×10−16 cm2, respectively, are shown to be introduced into the oxide layer. A good correlation of the electron trap concentration with a cross section of σ1(−)>10−14 cm2 and the concentration of the implanted Ge atoms, determined by Rutherford backscattering spectrometry inside the oxide, is observed. The decrease of Ge concentration within the oxide layer with increasing duration of rapid thermal annealing is associated with Ge atom outdiffusion from the oxide at high-temperature annealing. The generated positive charge is shown to be collected near the SiO2/Si interface during the high field electron injection, both from the Al and Si side. A correlation of the generated positive charge with the Ge atoms embedded in the SiO2/Si interface is observed. The anode hole injection mechanism is suggested to be responsible for the observed generation of the positive charge.

Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

“…Assuming that the charge traps are located in the middle of the dioxide the data obtained from the C OX DV CC vs. Q INJ curves correlate well with a shift of the C-V characteristics (not shown). Such a kind of specific charging was not observed in the previous studies of other types of ionimplanted oxides [3,6], and can be linked to the presence of specific amphoteric defects with capture cross-sections distributed in the range of 8 Â 10 À17 -5 Â 10 À18 cm 2 . We suggest that these defects are associated with disturbed ARTICLE IN PRESS Fig.…”

“…Another series of samples with a Tb concentration of 1.5% was annealed in the temperature range of 800-1100 1C for 60 min. For the sake of comparison, some experiments were performed on samples incorporating a SiO 2 layer implanted with Ge ions to a concentration of up to 3% and heat treated by rapid thermal annealing (RTA) at 1000 1C for 6 s [3]. A semi-transparent indium-tin oxide (ITO) layer of 100 nm thickness was then deposited to fabricate electrodes with different diameters (from 0.1 to 0.5 mm).…”

Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing

“…[8][9][10][11] It has been reported that ion implantation of Ge into thin SiO 2 layers on Si wafers, followed by annealing, results in Ge accumulation at the Si/ SiO 2 interface. [12][13][14] Diffusion of Ge atoms during annealing can alter the interface, thereby having a significant influence on the memory characteristics of such structures. [13][14][15] It has also been suggested that charge storage is more likely to occur within the NCs rather than at the NC/ SiO 2 interface.…”

“…[12][13][14] Diffusion of Ge atoms during annealing can alter the interface, thereby having a significant influence on the memory characteristics of such structures. [13][14][15] It has also been suggested that charge storage is more likely to occur within the NCs rather than at the NC/ SiO 2 interface. 16 These reports suggest that the memory effect should depend strongly on the concentration and the position of defects and/or Ge NCs.…”

The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

“…Critical issues of the MOSLED performance are the device durability in terms of device operating lifetime, which has to be improved, and the strong-field injection-associated oxide degradation, which has to be prevented or at least retarded [11][12][13].…”