Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

Nazarov, A. M.; Osiyuk, I. N.; Tyagulskii, I. P.; Lysenko, V. S.; Prucnal, S.; Sun, J.; Skorupa, W.; Yankov, R.A.

doi:10.1016/j.jlumin.2006.07.014

Cited by 13 publications

(10 citation statements)

References 10 publications

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“…In Ref. 46 the EL quenching of RE 3+ ions in MOSLEDs was explained by Coulomb blocking of the REO X clusters caused by electron trapping in dangling bonds which were created due to the bond breaking of light and strained bonds in the SiO 2 matrix around the REO X clusters. This phenomenon was confirmed in Ref.…”

Section: Tb-implanted Devices: Defect Shell Modelmentioning

confidence: 99%

The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

Nazarov

Tiagulskyi

Tyagulskyy

et al. 2010

Journal of Applied Physics

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The effect of rare-earth clustering in dielectric media on the electroluminescence (EL) intensity, the charge trapping and the EL quenching was investigated using the example of Tb and Eu-implanted SiO2 layers. It was shown that the increase in the REOX cluster size induced by an increase in the furnace annealing temperature resulted in an increase in the concentration of electron traps with capture cross sections from 2×10−15 to 2×10−18 cm2. This is probably associated with an increase in the concentration of oxygen deficiency centers as well as with strained and dangling bonds in the SiO2 matrix which leads to an enhanced scattering of hot electrons and a decrease in the excitation cross section of the main EL lines of RE3+ ions. For the main EL lines of Tb3+ and Eu3+ ions the relation of the EL quenching to negative and positive charge generation in the SiO2 was considered. It was demonstrated that in case of REOX nanoclusters with small sizes (up to 5 nm) the EL quenching process can mainly be explained by a defect shell model which suggests the formation of negatively charged defect shells around the nanoclusters leading to a Coulomb repulsion of hot electrons and a suppression of the RE3+ excitation. At high levels of the injected charge (more than 2×1020 e/cm2) a second stage of the EL quenching was observed which was contributed to a positive charge accumulation in the SiO2 at a distance beyond the tunneling distance from the SiO2Si interface. In case of Eu-implanted SiO2 the quenching of the main EL line of Eu3+ is mostly correlated with positive charge trapping in the bulk of the dielectric. A model of EL quenching of the main Eu3+ line is proposed.

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Section: Tb-implanted Devices: Defect Shell Modelmentioning

confidence: 99%

The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

Nazarov

Tiagulskyi

Tyagulskyy

et al. 2010

Journal of Applied Physics

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“…The EL spectra were measured at constant current under high electric field regimes when electrons are injected from the Si into the SiO 2 conduction band by Fowler-Nordheim (FN) or trap assisted tunneling (TAT) mechanisms (1,2). Additionally, the EL intensity (ELI) at main emission wavelengths was studied at constant current regime as a function of injected charge at the same time with the measurement of the applied voltage to the structure which allowed us to study charge trapping together with EL intensity during the device operation (5). All measurements were performed in the temperature range from room temperature up to 200 °C…”

Section: Samples and Measurementsmentioning

confidence: 99%

Thermal Effect on Electroluminescence Quenching in SiO₂ with Ge and ReO_X Nanoclusters

et al. 2012

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Thermal quenching and thermal dependences of the electrical quenching of electroluminescence in metal-oxide-silicon light-emitting devices implanted by Ge and Tb ions containing Ge and TbOx nanoclusters after annealing are studied. Light thermal quenching of the main green line (541 nm) in the EL spectrum of Tb implanted structures is observed. The strong temperature dependence of the electrical quenching of EL both for Ge and Tb implanted structures is explained by the participation of mobile ions in negative and positive charge generation in the bulk of SiO2 and near the SiO2-Si interface, correspondingly.

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“…Recently it was shown that the EL intensity of RE-implanted MOSLEDs under constant current injection shows a constant plateau phase followed by EL quenching, 13 which was explained by electron trapping caused by traps with a small capture cross section. Recently it was shown that the EL intensity of RE-implanted MOSLEDs under constant current injection shows a constant plateau phase followed by EL quenching, 13 which was explained by electron trapping caused by traps with a small capture cross section.…”

Section: Anomalous Wear-out Phenomena Of Europium-implanted Light Emimentioning

confidence: 99%

Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

Rebohle

Lehmann

Prucnal

et al. 2009

Journal of Applied Physics

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Articles you may be interested inComparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Sioxide fabricated by plasma-enhanced chemical vapor deposition and ion implantationThe effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metaloxide-semiconductor light-emitting devices Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure Appl. Phys. Lett. 93, 071908 (2008); 10.1063/1.2964176 Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu Appl. Phys. Lett. 90, 181121 (2007); 10.1063/1.2735285Bright green electroluminescence from Tb 3 + in silicon metal-oxide-semiconductor devicesThe anomalous wear-out phenomena of Eu-implanted metal-oxide-semiconductor devices were investigated. It will be shown that in contrast to other rare earth elements the electroluminescence ͑EL͒ intensity of Eu-implanted SiO 2 layers can rise under constant current injection before the known EL quenching will start. Under certain circumstances, this rise may amount up to two orders of magnitude. The EL behavior will be correlated with the microstructural and electrical properties of the devices. Transmission electron microscopy and Rutherford backscattering spectroscopy were applied to trace the development of Eu/Eu oxide clusters and the diffusion of Eu to the interfaces of the gate oxide layer. The hydrogen profile within the SiO 2 -SiON interface region was determined by nuclear reaction analysis. Current-voltage characteristics, EL decay times, and the progression of the voltage and the EL spectrum with increasing charge injection were measured to study charge and trapping phenomena in the oxide layer to reveal details of the EL excitation mechanism. A first qualitative model for the anomalous life time behavior is proposed.

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Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

Cited by 13 publications

References 10 publications

The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

Thermal Effect on Electroluminescence Quenching in SiO₂ with Ge and ReO_X Nanoclusters

Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

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Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

Cited by 13 publications

References 10 publications

The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

Thermal Effect on Electroluminescence Quenching in SiO2 with Ge and ReOX Nanoclusters

Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

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Thermal Effect on Electroluminescence Quenching in SiO₂ with Ge and ReO_X Nanoclusters