Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons

Abstract

Trapping times of drifting electrons and holes were measured in high resistivity standard, oxygenated and magnetic Czochralski p-type materials with charge correction method. Diodes were irradiated with neutrons up to equivalent fluence Φ eq =3x10 14 cm -2 . Trapping times were parameterized as 1/τ=βΦ. Average β was measured to be β e =4.2x10 -16 cm 2 ns -1 for electrons and β h = 4.3x10 -16 cm 2 ns -1 for holes.

Comparing radiation tolerant materials and devices for ultra rad-hard tracking detectors

“…Early estimations of the trapping parameter c, the constant for neutron damaged n-type pad detectors, in Eq. (5) gave c 1 ¼ 5.1 Â 10 À16 cm 2 /ns, using the transient current technique (TCT) [23]. The dotted line in Fig.…”

“…[23]. Since in n-on-p type detectors the signal is mostly due to electron transport, we concentrate here on electron trapping only, and simulate the collected signal simply with a step-wise transport of electrons in a field of a p-type microstrip detector.…”

Development of 3D Detectors at FBK-irst

“…n/cm 2 for different bias voltages (note that the lateral depletion voltage is 400 V). Radiation damage is included in the simulations by using the effective doping concentration, (i.e., 2 × 10 14 cm −3 , calculated assuming an acceptor introduction rate of 2×10 −2 cm −1 [18]), and by accounting for carrier trapping with the trapping times reported in [18]. Current signals (see Fig.…”

New developments on 3D detectors at IRST

“…is used in the simulations, assuming the acceptor introduction rate to be 2×10 −2 cm −1 [11]. Moreover, a post-processing of the simulated current signals is performed to account for carrier trapping, relying on the trapping times reported in [11].…”

“…Moreover, a post-processing of the simulated current signals is performed to account for carrier trapping, relying on the trapping times reported in [11]. As can be seen in Fig.…”