New developments on 3D detectors at IRST

Abstract

We report on the latest results from the development of 3D silicon radiation detectors at IRST (Trento, Italy). A new detector concept has been defined, namely 3D-DDTC (Double-side Double-Type Column): it involves alternate etching of columnar electrodes of both doping types from both wafer sides, and stopping at a short distance (d) from the opposite surface. Simulations prove that, if d is kept small with respect to the wafer thickness, this approach can yield charge collection properties comparable to those of standard 3D detectors, with the advantage of a simpler fabrication process. Two wafer layouts (including strip detectors, pixel detectors, and test structures) have been designed with reference to this technology, and two fabrication runs have been fabricated. Simulation results and preliminary experimental results from the characterization of test structures from the first 3D-DDTC batch are reported.

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

“…3D Double Side (3D-DS) process was introduced by the Microelectronics Institute of Barcelona (IMB-CNM, CSIC) [34,35] and the Fundazione Bruno Kessler (FBK) [36]. (FBK and other foundries developed intermediate technologies; see [2] for a review).…”

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

“…With further development of this technology, some variants of the devices have been proposed, such as the single type column (3D-STC) [6], one sided 3D detector [7][8][9], doubleside double-type column detector [10][11][12][13][14][15][16], hybird pixel detector [17], ultra-thin 3D silicon detector [18], and the SINTEF 3D active edge silicon detector [19,20], Small-Pitch 3D Pixel detector [21,22]. 3D strip and pad detectors irradiated with neutrons up to a fluence of 3 × 10 17 n eq /cm 2 are characterised in 2020 [23].…”