Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

Casse, G.

doi:10.1016/j.nima.2008.08.019

Cited by 29 publications

(15 citation statements)

References 39 publications

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“…This issue is the subject of intensive R&D activities on novel powering schemes (rad-hard DC/DC converters or serial powering) aimed at a cost and material budget reduction of the electronics related items. Last but not least the silicon sensors which can survive the very high radiation levels of the new collider are being investigated in various R&D packages both within the collaboration and in more general projects like RD50 [4]. The sensor technology to be used will be chosen taking into account not only the radiation hardness but also other system aspects like operational temperature or large scale availability.…”

Section: Phase II Upgradementioning

confidence: 99%

Design process of the CMS Silicon Tracker for Super-LHC

Civinini¹

2010

Proceedings of European Physical Society Europhysics Conference on High Energy Physics — PoS(EPS-HEP 2009)

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Following an expected increase of the LHC luminosity beyond its design value of 10 34 cm −2 s −1 the CMS collaboration is planning for a series of upgrades on the experimental apparatus. In particular the silicon tracker should undergo two major upgrades to cope with the increased luminosity of the collider. The first intervention (Phase I) concerns a replacement of the pixel system, the rest of the tracker being untouched. A second major upgrade (Phase II) consists of a full replacement of the entire silicon tracker to cope with the foreseen ultimate SLHC luminosity (10 35 cm −2 s −1 ). In these extreme conditions several hundred of interactions per beam crossing are expected and the number of charged particles generated will correspondingly increase with respect to the LHC conditions, requiring a new detector with a much higher granularity. This should be achieved keeping both the tracker power consumption and the material budget at levels which will not jeopardize the instrument operability and perfomance. Furthermore, the radiation tolerance of the new silicon sensors should be much higher than the present ones, requiring major developments on the detector technology side. Finally, the new tracker should be able to provide data to contribute to the CMS first level trigger. Possible layouts of the new tracking system have to be simulated in detail to understand the behaviour of the apparatus in a very high pile-up condition and to define a new optimal design which could meet the SLHC requirements. In these proceedings the CMS silicon tracker upgrades will be described, with a special emphasis on Phase I pixel system, Phase II tracker and first level track trigger.

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Section: Phase II Upgradementioning

confidence: 99%

Design process of the CMS Silicon Tracker for Super-LHC

Civinini¹

2010

Proceedings of European Physical Society Europhysics Conference on High Energy Physics — PoS(EPS-HEP 2009)

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“…1). Within the RD50 1 collaboration it was found that oxygenated silicon does not follow the NIEL (Non-Ionizing Energy Loss) predictions and a mixture of neutron and charged hadron irradiation could generate compensating defects, which results in an increased charge collection compared to oxygen lean material [3]. Therefore we study sensors made of magnetic Czochralski (MCz; high oxygen concentration due to manufacturing process) and standard float-zone (FZ) material.…”

Section: Introductionmentioning

confidence: 99%

CMS HPK sensor characterisation

Dierlamm¹

2013

Proceedings of the 21st International Workshop on Vertex Detectors — PoS(Vertex 2012)

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“…Also radiation hardness is important in many nuclear safeguard applications. Further benefits of thin detectors include reduced mass, fast charge collection and due to lower drift time for a given voltage, some possible advantage in charge collection and reverse current after high irradiation fluences [2].…”

Section: Introductionmentioning

confidence: 99%

Characterization of thin p-on-p radiation detectors with active edges

Peltola¹,

Wu²,

Kalliopuska³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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Active edge p-on-p silicon pixel detectors with thickness of 100 µm were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 µm the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

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Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

Cited by 29 publications

References 39 publications

Design process of the CMS Silicon Tracker for Super-LHC

Design process of the CMS Silicon Tracker for Super-LHC

CMS HPK sensor characterisation

Characterization of thin p-on-p radiation detectors with active edges

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