Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current–voltage and capacitance–voltage measurements

Sen, Banani; Wong, Hei; Molina, Joel; Iwai, Hiroshi; Ng, Jin Aun; Kakushima, Kuniyuki; Sarkar, C. K.

doi:10.1016/j.sse.2007.01.032

Cited by 43 publications

(15 citation statements)

References 16 publications

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“…Yet, amongst all these issues, the interface properties and their thermal instabilities need to be resolved firstly [64][65][66][67][68][69][70][71][72]. Transition metal (TM) or rare-earth metal (RE) based high-k dielectrics are extrinsic materials to the substrate silicon.…”

Section: Subnanometer Eot Leakage Current and High-k Instabilitiesmentioning

confidence: 99%

“…It was proposed that the oxygen in W may diffuse into the La 2 O 3 film to fill up the oxygen vacancies there. Oxygen vacancies are the major defect centers in La 2 O 3 which result in several instability issues and enhance the gate leakage current [59][60][61][62][63][64][65][66][67][68][69][70][71]. Post-metallization annealing may cause an reverse effect.…”

Section: Lanthanum Oxide/metal Gate Interfacementioning

confidence: 99%

“…Most of the high-k silicides are conductive. The interfacial silicide layer would not affect the EOT but the interface metal-Si bonding is one of the interface trap precursors and results in the channel mobility degradation and in other instabilities [2,[59][60][61][62][63][64][65][66][67][68][69][70]. Most of the high-k materials, including hafnium oxide and lanthanum oxide are only marginally stable against the formation of silicates.…”

Section: Lanthanum Oxide/silicon Interfacementioning

confidence: 99%

See 2 more Smart Citations

On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

Wong

Iwai

2015

Microelectronic Engineering

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Section: Subnanometer Eot Leakage Current and High-k Instabilitiesmentioning

confidence: 99%

Section: Lanthanum Oxide/metal Gate Interfacementioning

confidence: 99%

Section: Lanthanum Oxide/silicon Interfacementioning

confidence: 99%

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On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

Wong

Iwai

2015

Microelectronic Engineering

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“…According to ion radius and temperature, rare earth sesquioxides can crystallize in three polymorphic forms below 2000 • C: cubic (C), monoclinic (B) and hexagonal (A); from which they transform to high temperatures H-and X-forms [4] [5][6][7][8][9][10][11][12]. It can be an effective additive in various polymers [13][14][15], an important component of new advanced ceramics [16,17], or a component in specialized optical glasses [18,19].…”

Section: Introductionmentioning

confidence: 99%

The concentration quenching of photoluminescence in Eu3+-doped La2O3

Đorđević¹,

Antić²,

Nikolić³

et al. 2013

Journal of Research in Physics

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This work explores the influence of dopant concentration on photoluminescent emission and kinetics of Eu 3+ -doped (0.2−10 at.%) nanocrystalline lanthanumoxide powders. The X-ray diffraction analysis confirmed that all samples crystallize in La 2 O 3 hexagonal phase with space group P3m1. Transmission electron microscopy showed particles with non-uniform shape and diverse size distribution with an average particle size of (95 ± 5) nm. The room temperature photoluminescence spectra of all samples contain characteristic Eu 3+ luminescence lines with the most pronounced red 5 D 0 → 7 F 2 emission at about 626 nm. The maximum intensity of red emission is observed for the sample containing 5 at.% of Eu 3+ ions. The emission kinetics was recorded in the temperature range from 10 K to 300 K. The maximum lifetime value of 0.98 ms obtained for the sample with 0.5 at.% Eu 3+ at room temperature increases up to 1.3 ms at 10 K.

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“…Lanthanum oxide (La 2 O 3 ) has been recently proposed [1] as a substitute for SiO 2 in the gate of CMOS integrated circuits. One of the problems involved in the use of lanthanum oxide is moisture absorption; another is crystallinity.…”

Section: Introductionmentioning

confidence: 99%

Influence of gadolinium concentration on the EMR spectrum of Gd3+ in La2O3

Biasi

Grillo

2009

Journal of Alloys and Compounds

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a b s t r a c tElectron magnetic resonance (EMR) spectra of gadolinium-doped lanthanum oxide powders have been studied at room-temperature for Gd concentrations between 0.02 and 2.00 mol.%. The results suggest that Gd 3+ ions occupy substitutional sites, that the EMR linewidth and intensity increase with increasing Gd concentration and that the range of the exchange interaction between Gd 3+ ions is about 0.39 nm, much smaller than that of the same ion in other rare earth oxide.

show abstract

Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current–voltage and capacitance–voltage measurements

Cited by 43 publications

References 16 publications

On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

The concentration quenching of photoluminescence in Eu3+-doped La2O3

Influence of gadolinium concentration on the EMR spectrum of Gd3+ in La2O3

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