The physics and effects of nitrogen incorporation into HfO2 films were studied in detail. The authors found that only a trace amount (∼5%) of nitrogen can be introduced into the HfO2 films using plasma immersion ion-implantation technique, regardless of implantation dose. They proposed that the nitrogen incorporation is due to the filling of O vacancies (VO) and replacement of VO O neighbors in the bulk with nitrogen atoms. At the interface, the nitrogen atoms exist in the form of Hf–N and Si–N bonding, which significantly improve the interface properties of the HfO2∕Si structure. Temperature-dependent capacitance-voltage characteristics measurements indicate that both interface and oxide trap densities were greatly reduced with the incorporation of trace amount of nitrogen atoms.
By considering acoustic phonon mode displacements in nanowires, the piezoelectrically induced electric polarization vector and the associated potential are calculated. For the case of charge-free semiconductor nanowires, the piezo energies generated by strains applied in different directions are compared. For the directions considered, it is found that the maximum piezo energy in these nanowires is generated for strain applied in the vertical direction (i.e., along z-axis). Moreover, for these nanowires, energy generation in AlN and ZnO are found to be superior to GaN, just as expected based on past treatments of nanowires using phonons of bulk structures.
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