Trapped oxygen in the grain boundaries of ZnO polycrystalline thin films prepared by plasma-enhanced chemical vapor deposition

Kim, Young‐Jin; Kim, Hyeong-Joon

doi:10.1016/s0167-577x(99)00124-x

Cited by 65 publications

(23 citation statements)

References 13 publications

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“…Moreover, high quality deposition methods using thermal plasmas [83,84], (low pressure (LP), metal organic (MO), plasma enhanced (PE)) chemical vapor deposition (CVD) [85,86], electron beam evaporation [87], pulsed laser deposition [88,89,90,91,92,93] and atomic layer deposition [94] can be applied.…”

Section: Transparent Conducting Oxides (Tcos)mentioning

confidence: 99%

Transparent Conducting Oxides—An Up-To-Date Overview

2012

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Transparent conducting oxides (TCOs) are electrical conductive materials with comparably low absorption of electromagnetic waves within the visible region of the spectrum. They are usually prepared with thin film technologies and used in opto-electrical apparatus such as solar cells, displays, opto-electrical interfaces and circuitries. Here, based on a modern database-system, aspects of up-to-date material selections and applications for transparent conducting oxides are sketched, and references for detailed information are given. As n-type TCOs are of special importance for thin film solar cell production, indium-tin oxide (ITO) and the reasonably priced aluminum-doped zinc oxide (ZnO:Al), are discussed with view on preparation, characterization and special occurrences. For completion, the recently frequently mentioned typical p-type delafossite TCOs are described as well, providing a variety of references, as a detailed discussion is not reasonable within an overview publication.

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Section: Transparent Conducting Oxides (Tcos)mentioning

confidence: 99%

Transparent Conducting Oxides—An Up-To-Date Overview

2012

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“…Increased electrical and photoconductivity with high transparency, exhibited by ZnO:Sn in this study indicates the enhanced suitability of doped over undoped, for application in opto-electronic devices [11,12].…”

Section: Introductionmentioning

confidence: 52%

“…The grain size of ZnO thin films prepared at 350 0 C decrease slightly from ~21 nm to ~16 nm on doping while the thicknesses of the films are between 110 and 140 nm (measured by stylus method). Dislocation density (δ) determined from the relation δ=1/D 2 is found to vary from 2 × 10 15 m -2 in ZnO to 4× 10 15 m -2 in ZnO:Sn, probably due to the shallow donor defects resulted by substitution of Sn at Zn sites [12,14]. The defect state is indicated by the high temperature electrical conductivity data and is explained in the last section 'electrical properties'.…”

Section: Experimental Techniquementioning

confidence: 89%

Effect of Sn doping on properties of transparent ZnO thin films prepared by thermal evaporation technique

Sheeba¹,

Vattappalam²,

Naduvath

et al. 2015

Chemical Physics Letters

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“…Zinc content in the film increases with the increase in the substrate temperature until 200 • C and drops at 250 • C for the film deposited at 150 W. On the contrary, oxygen content in the film decreases with the increase in the substrate heating temperature until 200 • C and increases at 250 • C for the film deposited at 150 W. Fig. 3b shows the relative atomic concentration of zinc and oxygen obtained using XPS surface scan for the samples deposited at different deposition powers with H 2 /Ar gas flow and only Ar flow in 531.4 ± 0.10 eV (OII) [31]. The binding energy component located at 532.1 ± 0.15 eV (OIII) is attributed to loosely bonded oxygen in the surface of the ZnO:Al thin films [32,33].…”

Section: Methodsmentioning

confidence: 99%