Studies on the effect of hydrogen doping during deposition of Al:ZnO films using RF magnetron sputtering

Shantheyanda, Bojanna P.; Sundaram, Kalpathy B.; Shiradkar, Narendra

doi:10.1016/j.mseb.2012.08.026

Cited by 7 publications

(5 citation statements)

References 37 publications

(38 reference statements)

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“…A comparative study correlating room temperature electrical conductivity with the optical band gap for various ZnO:H films reported in the contemporary literature [47][48][49][50][51] is shown in Fig. 8.…”

Section: Discussionmentioning

confidence: 99%

Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices

Mondal

Das

2016

Phys. Chem. Chem. Phys.

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Hydrogenation of the ZnO:Ga network has been chosen as a promising avenue to further upgrade the optoelectronic and structural properties of the films. With an optimum incorporation of hydrogen at a low substrate temperature (TS = 100 °C) in RF magnetron sputtering plasma, the ZnO:Ga:H film, with a large crystallite size (∼17 nm) and improved crystallinity along the optimally preferred c-axis orientation with respect to both the 〈100〉 (I〈002〉/I〈100〉 ∼ 74) and 〈103〉 (I〈002〉/I〈103〉 ∼ 10) directions, attains a high electrical conductivity (σ ∼ 1.5 × 10(3)) and ∼90% visible range optical transmission that yields a wide optical band gap of ∼3.78 eV. The dominant c-axis orientation of the ZnO crystals exhibits a distinct UV luminescence band at ∼340 nm that arises as a result of the typical exciton emission or near-band-edge emission, which occurs due to the recombination of photo-generated electrons and holes in the valence band or in traps near the valence band. Vacancies created by the out diffusion of oxygen from the network induces the growth along the 〈103〉 crystallographic orientation. With the introduction of an optimum amount of hydrogen into the network, the VO peak (OII) in the O 1s XPS spectrum significantly reduces in intensity while the Zn-OH peak (OIII) increases, indicating enhanced surface absorption of O species, which causes the improvement of c-axis orientation. The increase in the conductivity has been attributed to the centers assigned to isolated hydrogen atoms in the anti-bonding sites (ABO) or bond-centered sites of O-Zn bonds (BC), and Zn vacancies passivated by one or two hydrogen atoms. Hydrogen-induced dopant-like defects in the film and the associated large amount of tensile stress developed within the network has been correlated to the high conductivity and the wide band gap of the ZnO:Ga:H film due to the decreased repulsion between the O 2p and the Zn 4s bands and the Burstein-Moss effect as a consequence of the increased carrier concentration. Highly conducting and transparent c-axis oriented ZnO:Ga:H films grown by a device compatible process at a low TS are extremely useful for various stacked layer thin film devices, including solar cells.

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Section: Discussionmentioning

confidence: 99%

Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices

Mondal

Das

2016

Phys. Chem. Chem. Phys.

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“…Due to high conductivity, n-type TCOs are used for conducting electrode applications [8]. Extensive research has been conducted on n-type TCOs such as Sn-doped In 2 O 3 (ITO) [9,10], Sc-doped ZnO [11,12], and Al-doped ZnO (AZO) [13][14][15][16]. Nonetheless, there exists a lack of research on p-type TCOs, impeding the progress of transparent electronics applications [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Deposition and Optical Characterization of Sputter Deposited p-Type Delafossite CuGaO2 Thin Films Using Cu2O and Ga2O3 Targets

Bharath,

Saikumar,

Sundaram

2024

Materials

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CuGaO2 thin films were deposited using the RF magnetron sputtering technique using Cu2O and Ga2O3 targets. The films were deposited at room temperature onto a quartz slide. The sputtering power of Cu2O remained constant at 50 W, while the sputtering power of Ga2O3 was systematically varied from 150 W to 200 W. The films were subsequently subjected to annealing at temperatures of 850 °C and 900 °C in a nitrogen atmosphere for a duration of 5 h. XRD analysis on films deposited with a Ga2O3 sputtering power of 175 W annealed at 900 °C revealed the development of nearly single-phase delafossite CuGaO2 thin films. SEM images of films annealed at 900 °C showed an increasing trend in grain size with a change in sputtering power level. Optical studies performed on the film revealed a transmission of 84.97% and indicated a band gap of approximately 3.27 eV. The film exhibited a refractive index of 2.5 within the wavelength range of 300 to 450 nm.

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“…By precisely controlling the doping, TCOs such as SnO 2 , In 2 O 3 , and ZnO can depict the electrical properties of a metal, semiconductor, or insulator while maintaining optical transparency [8][9][10][11]. Some of the well-known n-type 2 of 23 TCOs include Sn-doped In 2 O 3 (ITO) [12][13][14], Sc-doped ZnO [15,16], SnO 2 [17,18], Al-doped ZnO (AZO) [19][20][21][22][23], and CdSnO 2 [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Radio Frequency Sputtered p-Type Delafossite Copper Chromium Oxide (CuCrO2) Thin Films and Investigation of Diode Characteristics Forming Transparent pn-Heterojunction

2023

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For the first time, the deposition of CuCrO2 thin films was carried out using a dual-target RF magnetron sputtering technique using Cu2O and Cr2O3 targets. The deposited films were subsequently annealed in N2 ambiance from 600–900 °C. This work reports that the electrical, optical, structural, and morphological properties of CuCrO2 thin films are significantly affected due to the variation in the annealing temperature. XRD analysis confirms the presence of single-phase CuCrO2 in the films annealed at 650 °C. The presence of Cu in the 1+ oxidation state in the phase pure CuCrO2 thin films was confirmed through XPS analysis. Further, through XPS analysis, the oxidation states of Cu and Cr, the full-width half maximum (FWHM), the peak positions, and their respective binding energies have been elucidated. SEM analysis confirms the promotion of nanocrystalline growth in the thin films as the annealing temperature was increased from 600 °C. The average grain size increased from 40.22 nm to 105.31 nm as the annealing temperature was increased from 600 to 900 °C. Optical studies conducted in the wavelength range of 200 nm to 800 nm revealed a decrease in the optical transmission and optical bandgap with an increase in the annealing temperature. The highest optical transmission of ~81% and an optical bandgap of 3.21 eV were obtained for the films depicting the delafossite nature of CuCrO2. The optical bandgap was found to vary between 3.16 eV and 3.74 eV for the films studied in this research. The lowest resistivity of 0.652 Ω cm was obtained for the films annealed at 650 °C. Transparent heterojunction diodes involving p-type delafossite copper chromium oxide (CuCrO2) and n-type indium tin oxide (ITO) were fabricated. The best diode depicted a cut-in voltage of 0.85 V, a very low leakage current of 1.24 x 10-8, an ideality factor of 4.13, and a rectification ratio of 2375.

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Studies on the effect of hydrogen doping during deposition of Al:ZnO films using RF magnetron sputtering

Cited by 7 publications

References 37 publications

Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices

Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices

Deposition and Optical Characterization of Sputter Deposited p-Type Delafossite CuGaO2 Thin Films Using Cu2O and Ga2O3 Targets

Effect of Annealing Temperature on Radio Frequency Sputtered p-Type Delafossite Copper Chromium Oxide (CuCrO2) Thin Films and Investigation of Diode Characteristics Forming Transparent pn-Heterojunction

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