Trap saturation in silicon solar cells

Fabre, E.; Mautref, M.; Mircéa, A.

doi:10.1063/1.88407

Cited by 49 publications

(12 citation statements)

References 2 publications

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“…This is consistent with reports of an increase in lifetime with light intensity in silicon material [24] and in solar cells [25], [26]. Such an increase results from "trap saturation."…”

Section: For a Cell 100 Pm In Thickness ( T ) A Volume Generation Rsupporting

confidence: 81%

The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cells

Meier

Hwang

Campbell

1988

IEEE Trans. Electron Devices

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Abstract-The decrease of minority-carrier lifetime with resistivity and with illumination level in bifacial dendritic web silicon solar cells is addressed. This variation of lifetime is shown to be consistent with the presence of a distribution of defect levels in the bandgap that arise from extended defects in the web material. The extended defects are precipitates, recently shown to be oxide precipitates, that decorate dislocation cores. It follows that the sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority-carrier band edge. It is not necessary that the dopant atom itself, or a complex including the dopant atom, acts as a recombination center in order to explain the observed decrease in lifetime with doping density. Good agreement is obtained between calculated and measured values of short-circuit current and quantum efficiency for bifacial cells covering a range of doping density ( 6 x lOI4 to 3 x 10l6 ~m -~) and illumination level (0.001 to 1 sun), with illumination from either back or front of the cell. The implications of this approach extend to concentrator cells and to other devices in which minority-carrier lifetime is an important parameter. This includes devices made using Czochralski-grown silicon, where oxygen and oxide precipitates likewise play an important role in determining lifetime.

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“…This is consistent with reports of an increase in lifetime with light intensity in silicon material [24] and in solar cells [25], [26]. Such an increase results from "trap saturation."…”

Section: For a Cell 100 Pm In Thickness ( T ) A Volume Generation Rsupporting

confidence: 81%

The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cells

Meier

Hwang

Campbell

1988

IEEE Trans. Electron Devices

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“…Previous studies on polycrystalline Si have shown that SRH recombination centers saturate at high N 0 . 39,40 This behavior is consistent with the observed increase in the transient component with increasing N 0 . Moreover, the screening of SRH sites slows recombination, which causes N 0 to decrease more slowly with time.…”

Section: Resultssupporting

confidence: 79%

Time resolved imaging of carrier and thermal transport in silicon

Hurley

Wright

Matsuda

et al. 2010

Journal of Applied Physics

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We use ultrashort optical pulses to microscopically image carrier and thermal diffusion in two spatial dimensions in pristine and mechanically polished surfaces of crystalline silicon. By decomposing changes in reflectivity in the latter sample into a transient component that varies with delay time and a steady-state component that varies with pump chopping frequency, the influence of thermal diffusion is isolated from that of carrier diffusion and recombination. Additionally, studies using carrier injection density as a parameter are used to clearly identify the carrier recombination pathway.

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“…3.11. The trap saturation effect was reported before for Si-based p-n homojunction [140][141][142][143]. Note that the p values that are shown in Table 3…”

Section: Reverse Recovery Transient Characteristicsupporting

confidence: 60%

Silicon heterojunction solar cell based on organic and transition metal oxide selective carrier contact layer

Prakoso¹

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Si heterojunction solar cells based on organic and transition metal oxide selective carrier contact (SCC) layer are developed to bypass the high temperature diffusion process required for the fabrication of p-n junction in conventional Si solar cell. In this work, we design, simulate, fabricate and characterize Si heterojunction solar cells based on organic material, poly(3,4-ethylenedioxythiophene) : polystyrenesulphonate (PEDOT:PSS), and transition metal oxide, molybdenum oxide (MoOx). To have an in-depth understanding of the n-Si/PEDOT:PSS hybrid solar cell, we characterize the heterojunction by reverse recovery transient (RRT) and DC I-V techniques to ascertain its nature. Solar cells are fabricated by spin coating PEDOT:PSS solution on top of n-Si with various doping concentrations (ND) from 10 14-10 17 cm-3. The results of RRT measurement contradicts the Schottky junction model that is commonly assumed for such heterojunction. Instead the n-Si/PEDOT:PSS junction act consistently with the n-p + junction model. The forward bias current injection level is found to influence τp, attributed to the trap saturation effect at n-Si and PEDOT:PSS interface. The interpretation of n-p + junction model is also consistent with DC-IV measurement. Photovoltaic measurement of the n-Si/PEDOT:PSS hybrid solar cell has been conducted to understand the effect of ND on solar cell performance.

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Trap saturation in silicon solar cells

Cited by 49 publications

References 2 publications

The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cells

The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cells

Time resolved imaging of carrier and thermal transport in silicon

Silicon heterojunction solar cell based on organic and transition metal oxide selective carrier contact layer

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