The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cells

Meier, D.L.; Hwang, Jiann Yang; Campbell, R. B.

doi:10.1109/16.2417

Cited by 53 publications

(42 citation statements)

References 18 publications

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“…In fact, for a front side illumination there are lots of generated holes in the emitter and most of them will be the traps of the electrons coming from the base region. The profile of IQE using the eq.15 is in a good agreement with the experimental spectral response (Meier, 1988) The emitter region becomes the electron recombination areas when it is sufficiently illuminated. Taking into account the contribution allows one to improve the IQE analytical expression.…”

Section: Emitter Contribution On Iqesupporting

confidence: 67%

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3d Approach Of Spectral Response For A Bifacial Silicon Solar Cell Under A Constant Magnetic Field

Zouma¹,

Maiga²,

Dieng³

et al. 2009

Glo Jnl Pure Appl Sci

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A three-dimensional study is made to improve the theoretical approach of spectral response of bifacial polycrystalline silicon solar cells. This study has allowed taking into account new parameters like grain size and grain boundaries recombination velocity, which reduce the cell efficiency. Losses in emitter region and external magnetic field are also being taken into account in order to perfect the description of measured spectral response. Then the new analytical expressions of carrier, photocurrent and short circuit densities are produced for front side and rear side illuminations. Homemade software based on the new analytical expressions of internal quantum efficiency is used to fit the experimental data. PACS:73.50.Pz KEYWORDS: 1-Spectral response; 2-Polycrystalline; 3-Solar cell; 4-Magnetic field. INTRODUCTIONThe spectral response (SR) data are useful to determine the quality of solar cells. From the SR, one can determine fundamental parameters of solar cells like: effective diffusion length (L eff ), effective lifetime (τ eff ), back surface recombination velocity (S B ), which are used in the characterization above. There exists a lot of techniques of characterization using SR data, but each of them uses its own theoretical approach of SR. We can cite the linear fit method (Warta, 1992.), (Werner, et al., 1993), (Basu and Singh, 1994, pp.317-329), (Spiegel, et al., 2000), (Tool et al., 2002); its application leads to L eff directly and is suitable for solar cells where L eff is much smaller than the base region thickness.The theoretical approach of SR is better in producing accurate values of fundamental parameters. Thereby, the other parameters must be taken into account to describe SR especially for the polycrystalline silicon solar cells (Lu, et al., 2003) (Fedorov, et al., 2002, pp.49-55), which are mainly used in terrestrial applications. The grain size and the grain boundaries recombination velocity (S g ) (Lu, et al., 2003) (Ba, et al., 2003, pp.143-154) in polycrystalline silicon solar cells are important parameters which affect its efficiency.During the SR measurement (Spiegel, et al., 2000), the influences of external conditions like the temperature and the magnetic field intensity are not outdone.In this paper we make a new theoretical approach of the spectral response through a three dimensional study. In order to improve the SR, we are taking into account the contribution of emitter region, grain size, grain boundaries (GBs) recombination velocity, and an external magnetic field. We also apply a new technique to determine the recombination parameters based on new expressions of spectral response by fitting experimental data. This work is split into three parts: in the first part we have the theory that leads to the internal quantum efficiency, then in the second part we investigate the influence of magnetic field and GBs recombination and in the last part we present the new method and the results of its application. MODELLING Model and assumptionsIn this study, we use a sampl...

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Section: Emitter Contribution On Iqesupporting

confidence: 67%

“…We note that, grain size, GBs recombination velocity and the magnetic field have not been taking into account. The results are given in table2: The other characteristics of cells Q37C, Q68 and Q7C are given in (Meier et al, 1988).…”

Section: Methods Of Characteizationmentioning

confidence: 99%

3d Approach Of Spectral Response For A Bifacial Silicon Solar Cell Under A Constant Magnetic Field

Zouma¹,

Maiga²,

Dieng³

et al. 2009

Glo Jnl Pure Appl Sci

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“…Lifetime measurements were performed using Sinton WCT-120 lifetime tester in both quasi steady state and transient modes. The different dielectric layers under consideration were symmetrically deposited on both sides of the wafers, followed by a forming gas annealing at 432 • C for 30 min to activate the passivation mechanism [22,23].…”

Section: Sample Preparation For Lifetime Measurementsmentioning

confidence: 99%

Passivation effects of atomic-layer-deposited aluminum oxide

et al. 2013

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Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n-and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Q f ∼ 10 12 −10 13 cm −2 ) in combination with a low density of interface states (Dit). This paper investigates the passivation quality of thin (15 nm) Al2O3 films deposited by two different techniques: plasmaenhanced atomic layer deposition (PE-ALD) and Thermal atomic layer deposition (T -ALD). Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2) (20 nm), SiO2 (20 nm) deposited by plasma-enhanced chemical vapour deposition (PECVD) and hydrogenated amorphous silicon nitride (a-SiNx:H) (20 nm) also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS) capacitors were fabricated for Q f and Dit extraction through Capacitance-Voltage-Conductance (C-V -G) measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV). The influence of extracted C-V -G parameters (Q f ,Dit) on the injection dependent lifetime measurements τ (Δn), and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

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“…In Figure 1, we present, a 3D model of an n + -p-p + type of a bifacial silicon solar cell [19,20] under magnetic field [21][22][23].…”

Section: Theorymentioning

confidence: 99%

Wavelength and Constant Magnetic field Dependence of the Steady-state Photoconductivity of a Bifacial Silicon Solar Cell

Diao¹,

Sissoko²

2017

J Material Sci Eng

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In this work, a theoretical study on the photoconductivity of a bifacial silicon solar cell under monochromatic illumination and constant magnetic field is presented. Analytical expression of the photoconductivity is established according to base depth, illumination wavelength, junction recombination velocity and magnetic field value. The photoconductivity profile versus wavelength shows two energy absorption peaks corresponding to specific wavelengths. Based on a linear model of the photoconductivity versus junction recombination velocity, in a given interval, we determine an equivalent capacitance which depends on both wavelength and magnetic field.

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The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cells

Cited by 53 publications

References 18 publications

3d Approach Of Spectral Response For A Bifacial Silicon Solar Cell Under A Constant Magnetic Field

3d Approach Of Spectral Response For A Bifacial Silicon Solar Cell Under A Constant Magnetic Field

Passivation effects of atomic-layer-deposited aluminum oxide

Wavelength and Constant Magnetic field Dependence of the Steady-state Photoconductivity of a Bifacial Silicon Solar Cell

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