Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics

Unipolar resistive switching behaviors in amorphous lutetium oxide films

“…Oxide films prepared by pulsed laser deposition in an oxygen-deficient chamber contain a great deal of oxygen vacancies. [28][29][30] The total DOS of the cubic Lu 2 O 3 supercells with and without oxygen vacancy are plotted in the Fig. 7.…”

Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics

“…17 Other deposition methodology has been explored, such as high temperature oxidation of metallic films, ultrahigh vacuum electron-beam deposition, 17 and atomic layer deposition. 18 In our recent work, 19 the effect of N 2 and O 2 annealing ambients and the effect of light illumination on electrical behavior of Lu 2 O 3 were reported. A method to form nanodots embedded in Lu 2 O 3 using pulsed laser deposition for memory device application was also demonstrated.…”

Characterization of lutetium oxide-based thin-film capacitors by impedance spectroscopy

“…In this class, films of rare earth metal oxides (REO) and transition metal oxides are alternative candidates for the mentioned above applications and are currently intensively being examined [8][9][10][11][12][13][14][15][16][17]. Lutetium oxide (Lu 2 O 3 ) belongs to the REO group.…”

“…Lutetium oxide (Lu 2 O 3 ) belongs to the REO group. Thin films of Lu 2 O 3 have been recently extensively examined [13][14][15][16][17]. Dielectric and electrical studies have been carried out on samples with MIS-type and MIM-type electrodes configuration.…”