Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics

Darmawan, Peter; Lee, Pooi See; Setiawan, Y.; Lai, Jinfeng; Yang, Pan

doi:10.1116/1.2749526

Cited by 21 publications

(8 citation statements)

References 25 publications

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“…Among binary lutetium oxides, only Lu 2 O 3 is the stable solid phase with closed shell trivalent Lu ions, 1 possessing a strong insulating behavior owing to its large band gap (5.8 ± 0.1 eV). 2−4 On the other hand, lutetium monoxide LuO has existed only as a gaseous phase 5−7 such as various rare earth monoxides with divalent cations (except EuO) because of its largely positive Gibbs formation energy of the solid phase. 1,8 However, various rock-salt type rare earth monoxides were recently synthesized in the form of epitaxial thin films owing to nonequilibrium kinetic growth of the pulsed laser deposition method.…”

Section: Introductionmentioning

confidence: 99%

New Lutetium Oxide: Electrically Conducting Rock-Salt LuO Epitaxial Thin Film

et al. 2018

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C-rare earth structure lutetium sesquioxide Lu 2 O 3 has been recognized as a high- k widegap insulator with closed shell Lu 3+ ions. In this study, rock-salt structure lutetium monoxide LuO with unusual valence of Lu 2+ (4f 14 5d 1 ), previously known as the gaseous phase, was synthesized as an epitaxial thin film by the pulsed laser deposition method. In contrast with transparent and highly insulating Lu 2 O 3 , LuO possessed a dark-brown color and high electrical conductivity concomitant with strong spin–orbit coupling as a manifestation of Lu 5d electron carriers.

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Section: Introductionmentioning

confidence: 99%

New Lutetium Oxide: Electrically Conducting Rock-Salt LuO Epitaxial Thin Film

et al. 2018

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“…Rare earth metal oxides as high-κ dielectrics are considered as the replacement of hafnium-based technology [17-19], among which Lu 2 O 3 is the promising one as it shows well-insulating property, large bandgap (5.5 eV), better hygroscopic immunity, good thermal stability, and adequate dielectric constant of approximately 11 [20]. Gao et al reported promising unipolar RS behavior in amorphous Lu 2 O 3 oxide [21].…”

Section: Introductionmentioning

confidence: 99%

Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

et al. 2014

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In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu2O3 thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu2O3 thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu2O3/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu2O3 thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu2O3 thin film. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising applications in future advanced memory.

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“…With well insulating property, large band gap ͑5.5 eV͒, better hygroscopic immunity, good thermal stability, and adequate k value ͑ϳ11͒, Lu 2 O 3 has been studied as high-k candidate to replace silicon oxide as gate dielectrics. 25 However, experimental data related to the resistive switching behavior of lutetium oxide is not clear now. In this paper, we report the unipolar resistive switching properties of the amorphous Lu 2 O 3 films, and a model based on the redistribution of the oxygen vacancy-related defects is suggested to explain its switching behaviors.…”

Section: Introductionmentioning

confidence: 98%

Unipolar resistive switching behaviors in amorphous lutetium oxide films

Gao

Xia

et al. 2010

Journal of Applied Physics

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Articles you may be interested inUnipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components Electrically induced conducting nanochannels in an amorphous resistive switching niobium oxide film Appl. Phys. Lett. 97, 233509 (2010); 10.1063/1.3525710Forming-free colossal resistive switching effect in rare-earth-oxide Gd 2 O 3 films for memristor applications

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Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics

Abstract: Articles you may be interested inImpact of ultrathin Al2O3 interlayer on thermal stability and leakage current properties of TiO2/Al2O3 stacking dielectrics J. Vac. Sci.

Cited by 21 publications

References 25 publications

New Lutetium Oxide: Electrically Conducting Rock-Salt LuO Epitaxial Thin Film

New Lutetium Oxide: Electrically Conducting Rock-Salt LuO Epitaxial Thin Film

Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

Unipolar resistive switching behaviors in amorphous lutetium oxide films

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