Unipolar resistive switching behaviors in amorphous lutetium oxide films

Abstract

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Resistance switching properties of molybdenum oxide films

“…At the same time, much work and research is currently being carried out to speed up the integration of ReRAM devices [2], so if we look at the future, exploring materials that can be used in ReRAM applications is quite relevant. In addition to the Perovskite-type oxides [8], NiO [9] and TiO 2 [10], which are the most widely investigated oxides in the world, many oxides have recently been reported that show monopoplar and/or bipolar ReRAM switching properties [11][12][13][14][15][16][17][18][19][20][21]. Our present investigation of molybdenum oxide is in this same research category.…”

Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

“…Rare earth metal oxides as high-κ dielectrics are considered as the replacement of hafnium-based technology [ 17 - 19 ], among which Lu 2 O 3 is the promising one as it shows well-insulating property, large bandgap (5.5 eV), better hygroscopic immunity, good thermal stability, and adequate dielectric constant of approximately 11 [ 20 ]. Gao et al reported promising unipolar RS behavior in amorphous Lu 2 O 3 oxide [ 21 ]. In contrast, we previously demonstrated the bipolar RS in various high-κ rare earth metal oxides, such as Tm 2 O 3 , Yb 2 O 3 , and Lu 2 O 3 , on silicon substrate [ 22 ].…”

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

“…In OxRRAM, the resistive switching mechanism is governed by formation and annihilation of conductive filaments formed by either oxygen vacancies or movement of ions inside the RRAM devices [7]. However, in CBRAM, a metal cation is necessary to develop resistive switching behavior by constructing and destructing the conductive bridges formed through electrochemical process [8][9][10][11]. Moreover, it is mandatory for IT industry to enhance electrical characteristics by exposing MOSFETs to high temperature annealing [12].…”