Transverse Acoustoelectric Effect Applying in Surface Study of GaP:Te(111)

Abstract

The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te (111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime τ of minority carrier in the near-surface region and the surface potential V s in GaP:Te(111) surfaces after their different technological treatments were determined.

The Application of Surface Acoustic Waves in Surface Semiconductor Investigations and Gas Sensors

“…The first type forms effects observed in piezoelectric -changes of the velocity of SAW and changes of its attenuation [44]. The second type of effects are so called the acoustoelectric effects, observed in semiconductors [45,46].…”

“…These results formed the theoretical basis for new acoustic methods of determining the surface potential in semiconductors [46].…”

Photonic structures with grating couplers based on ZnO

“…On one hand, a photonic structure with a grating coupler may be an attractive technical solution, permitting to introduce or receive an elec− tromagnetic wave from the visible− and near infrared range in the optic structure, whose thickness amounts to about d w = 200-300 nm [4,5]. On the other hand, grating couplers can be used as active elements in sensor structures [6].…”

“…In the direction of wave propagation on the surface of planar structures, the grating couplers are constructed in the form of periodical disturbances of the refractive index (on the surface of the waveguide layer with the given thickness d w ) with given geometrical parameters, such as the so−called spatial period of the grating L, the period depth of the grat− ing couplers d s , their shape and the filling factor k w [4,5]. From the viewpoint of the optical waveguide, such a struc− ture may be considered to be as a set of layers characterised by the distribution and value of the refractive index of light in the respective layers, viz.…”

Gas sensors based on nanostructures of semiconductors ZnO and TiO2

“…An important group of sensors which proved to be effective in the determination of the concentration and the detection of NO x are sensors based on semiconductors with a wide forbidden energy gap, including metal oxides, such as TiO 2 [7], SnO 2 [8], WO 3 [9], In 2 O 3 , ZnO [10], Fe 2 O 3 and combination of those semiconductors. Sensors based on these materials (semiconductors) can be applied in various types of gas sensors, among others in resistance sensors, optical sensors, sensors with a surface acoustic wave and QCM (quartz crystal microbalance) sensors [11][12][13][14][15].…”