Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

Choi, Daniel S.; Balandin, Alexander A.; Leung, M. S.; Stupian, G. W.; Presser, Nathan; Chung, Sungwook; Heath, James R.; Khitun, Alexander; Wang, K. L.

doi:10.1063/1.2357847

Cited by 37 publications

(19 citation statements)

References 14 publications

(13 reference statements)

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“…The main reason for the lack of four-probe measurements on individual NW is the difficulty in making good electrical Ohmic contacts due to a native 10 nm thick Bi oxide coating that forms on the surface of the NWs. 10 Over last years, some research groups succeeded 10,11 although their studies focused on absolute resistivity without further fundamental transport properties such as MR. Recently, Shim et al 12 carried out magnetotransport properties of an individual single-crystalline ͑its axis oriented along the trigonal direction ͓001͔͒ 400-nm-diameter Bi NW.…”

Section: Weak-antilocalization Signatures In the Magnetotransport Promentioning

confidence: 99%

Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

Marcano

Sangiao

Plaza

et al. 2010

Applied Physics Letters

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We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5–300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.

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Section: Weak-antilocalization Signatures In the Magnetotransport Promentioning

confidence: 99%

Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

Marcano

Sangiao

Plaza

et al. 2010

Applied Physics Letters

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“…The observed trends generally agree with previous measurements. [14][15][16][17] The 200-nm wires yielded 6 bulklike metallic behavior (dR/dT > 0) and decreased mobility through boundary scattering, whereas the R for the 50-nm, 30-nm and 20-nm wires increased monotonically with decreasing temperature, suggesting a thermally activated charge carrier density, and saturates at low temperatures. The contrast between the diameter-dependent behaviors supports the conclusion from theory regarding the SMSC transition occuring at around 50 nm.…”

Section: Resistance and Thermopowermentioning

confidence: 99%

Surface state band mobility and thermopower in semiconducting bismuth nanowires

et al. 2011

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Many thermoelectrics like Bi exhibit Rashba spin-orbit surface bands for which topological insulator behavior consisting of ultrahigh mobilities and enhanced thermopower has been predicted. Bi nanowires realize surface-only electronic transport since they become bulk insulators when they undergo the bulk semimetal-semiconductor transition as a result of quantum confinement for diameters close to 50 nm. We studied 20-, 30-, 50-and 200-nm trigonal Bi wires. Shubnikov-de Haas magnetoresistance oscillations caused by surface electrons and bulklike holes enable the determination of their densities and mobilities. Surface electrons have high mobilities exceeding 2 m 2 sec -1 V -1 and contribute strongly to the thermopower, dominating for temperatures T< 100 K. The surface thermopower is −1.2 T µV/K 2 , a value that is consistent with theory, raising the prospect of developing nanoscale thermoelectrics based on surface bands.2

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“…In ref. (11), bismuth nanowires were patterned with cross sections of 40×30 and 40×50 nm 2 . Electrical measurements indicate that the wires were indeed below the semimetal-to-semiconductor critical dimension.…”

mentioning

confidence: 99%

Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

Gity¹,

Ansari²,

Lanius

et al. 2017

Applied Physics Letters

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Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages are achieved. As miniaturisation continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form junctions fails and forming heterojunctions becomes extremely difficult. Here, it is shown that it is not needed to introduce dopant atoms nor is a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved solely by manipulation of quantum confinement using approximately 2 nm thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this approach enables room temperature operation.

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Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

Cited by 37 publications

References 14 publications

Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

Surface state band mobility and thermopower in semiconducting bismuth nanowires

Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

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