Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

Marcano, N.; Sangiao, Soraya; Plaza, Manuel; Pérez, Lucas; Pacheco, A. F.; Córdoba, R.; Sánchez, Mónica Llano; Morellón, L.; Ibarra, M. R.; Teresa, J. M. De

doi:10.1063/1.3328101

Cited by 33 publications

(30 citation statements)

References 21 publications

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“…4,17,22 It is worth noting that the three-band model with electron and hole bulk bands together with a minority surface electron band have been recently reported to describe the magnetotransport properties on 100 nm-width Bi nanowires. 23 In the present case, however, the third band can be interpreted as an effective band which contains surface carriers characterized by an effective density and an effective mobility. This model accounts for two possible scenarios: ͑i͒ surface electron and hole bands where concentrations of electrons and holes are compensated, or ͑ii͒ dominant electron situation with higher mobility than holes.…”

Section: Resultsmentioning

confidence: 99%

Role of the surface states in the magnetotransport properties of ultrathin bismuth films

et al. 2010

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We found out that the Hall resistivity data (ρ H all ) of our original paper should be corrected due to an error in the wiring in the experimental set-up. The correction implies a change in the sign of the Hall resistivity data (−ρ H all ) presented in the original publication. This correction does not affect the interpretation of the experiments and our quantitative results remain valid, except that the third carrier band, required to account for the magnetic field evolution of the magnetoresistance and Hall resistivity, is a surface hole band (and not a surface electron band as it was reported in our original paper). This modification in the character of the surface carriers does not influence the conclusions made in the paper.In order to illustrate these points we show revised versions of Figs. 5,6,and 8, respectively. Figures 5(a) and 5(b) shows the corrected ρ H all isotherms from room temperature down to 2 K for the Bi films with thicknesses t = 100 nm and 10 nm, respectively. The remarkable change both in the magnitude and the field dependency of ρ H all with film 199904(E) (2013) thickness is shown in Fig. 6, in which the corrected ρ H all as a function of magnetic field is compared for different film thickness down to 10 nm at 2 K. Figure 8 displays the magnetic field dependence of the resistance and the corrected ρ H all at 50 K for 100-nm-thick film. Black solid line is calculated from the two band model (electron bulk and hole bulk band). Red solid line includes the third carrier band which has been interpreted as an effective band which contains surface carriers characterized by an effective density and an effective mobility. The values of the mobility μ i and the carrier density n i obtained for each band are not affected by the correction of the sign of the ρ H all and the results listed in the original Table I remain valid. However, the correction in the sign of ρ H all implies a change in the sign of the Hall coefficient R s of the surface band, which becomes positive (instead of negative, as was reported in our original paper). This implies that the surface carriers are holes with p s and μ p s (instead of electrons with n s and μ n s ). This minor change does not affect our conclusions.We would like to thank M. C. Martínez Velarte for drawing our attention to the wiring problem. 199904-2Role of the surface states in the magnetotransport properties of ultrathin bismuth films We have investigated the magnetotransport properties of ultrathin films of Bi grown on thermally oxidized Si͑001͒ substrates with thickness ranging from 10 to 100 nm at temperatures down to 2 K and in magnetic fields up to 90 kOe. Remarkable differences both in temperature and field dependence of the Hall resistivity are found for the films with thickness above and below 20 nm. These observations can be explained due to the presence of surface states, which play an important role in determining the electronic transport properties of the thinnest films. The estimated surface carrier density 4 ϫ 10 13 cm −2 at room temp...

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Section: Resultsmentioning

confidence: 99%

Role of the surface states in the magnetotransport properties of ultrathin bismuth films

et al. 2010

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“…21,22 At the large diameter range, the 2D surface state effect is veiled due to the small surface to volume ratio and large bulk electrons compared to the surface carrier density. 12 However, the obtained exponent of À0.43 reflects that the system is a hybridization of one and two dimensions. The fact that this exponent is closer to the two-dimensional system value À0.5 suggests that the surface state of Bi plays a significant role in transport.…”

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“…For a mesoscopic system with disorder and strong spin-orbit coupling, the phase coherent magneto-transport at low temperatures result in the appearance of weak antilocalization (WAL) and universal conductance fluctuations (UCF) effects. [10][11][12] These phenomena are affected by the phase-coherence length, l a , defined as the length where phase-coherent transport is preserved. Therefore, WAL and UCF are commonly used in determining the phase-coherence length of a material system.…”

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Weak antilocalization and conductance fluctuation in a single crystalline Bi nanowire

Kim

Lee

Brovman

et al. 2014

Applied Physics Letters

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We present the low temperature transport properties of an individual single-crystalline Bi nanowire grown by the on-film formation of nanowire method. The temperature dependent resistance and magnetoresistance of Bi nanowires were investigated. The phase coherence length was obtained from the fluctuation pattern of the magnetoresistance below 40 K using universal conductance fluctuation theory. The obtained temperature dependence of phase coherence length and the fluctuation amplitude indicates that the transport of electrons shows 2-dimensional characteristics originating from the surface states. The temperature dependence of the coherence length derived from the weak antilocalization effect using the Hikami–Larkin–Nagaoka model is consistent with that from the universal conductance fluctuations theory.

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“…Among the different methods for the synthesis of Bi, electrodeposition has appeared as a very effective one as it provides high-quality Bi nanostructures which have allowed the measurement of quantum transport in electrodeposited Bi nanowires (12) (13). However, the study of the previously mentioned 2D effects requires the growth of continuous high quality Bi films with a thickness lower than the wavelength of the electrons at the Fermi level ( F (Bi) = 40-70 nm).…”

Section: Introductionmentioning

confidence: 99%

Strategies to unblock the n-GaAs surface when electrodepositing Bi from acidic solutions

Prados

Ranchal

Pérez

2015

Electrochimica Acta

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Bismuth ultra-thin films grown on n-GaAs electrodes via electrodeposition are porous due to a blockade of the electrode surface caused by adsorbed hydrogen when using acidic electrolytes. In this study, we discuss the existence of two sources of hydrogen adsorption and we propose different routes to unblock the n-GaAs surface in order to improve Bi films compactness. Firstly, we demonstrate that increasing the electrolyte temperature provides compact yet polycrystalline Bi films. Cyclic voltammetry scans indicate that this low crystal quality might be a result of the incorporation of Bi hydroxides within the Bi film as a result of the temperature increase. Secondly, we have illuminated the semiconductor surface to take advantage of photogenerated holes. These photocarriers oxidize the adsorbed hydrogen unblocking the surface, but also create pits at the substrate surface that degrade the Bi/GaAs interface and prevent an epitaxial growth. Finally, we show that performing a cyclic voltammetry scan before electrodeposition enables the growth of compact Bi ultra-thin films of high crystallinity on semiconductor substrates with a doping level low enough to perform transport measurements.

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Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

Cited by 33 publications

References 21 publications

Role of the surface states in the magnetotransport properties of ultrathin bismuth films

Role of the surface states in the magnetotransport properties of ultrathin bismuth films

Weak antilocalization and conductance fluctuation in a single crystalline Bi nanowire

Strategies to unblock the n-GaAs surface when electrodepositing Bi from acidic solutions

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