1983
DOI: 10.1016/0304-8853(83)90288-3
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Transport properties in valence fluctuation compound Sm3Se4

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Cited by 6 publications
(3 citation statements)
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“…The quasielastic signal observed in the magnetic spectral response of Sm 3 Te 4 (figure 5) can be ascribed to spin fluctuations occurring within the degenerate ground state of the Sm 3+ ions. The spin-fluctuation time estimated from the experimental half-width /2 is in the order of 10 −12 s, orders of magnitude shorter than the value, τ = 10 −7 s at T = 100 K, derived from the 77 Se NMR in Sm 3 Se 4 [3]. However, these two values are not contradictory because the spin-fluctuation time corresponds to the relaxation of individual spins within the Sm 3+ configuration, which can be much faster, especially at low temperature, than the valence-fluctuation time associated with the exchange of 2+ and 3+ states.…”
Section: Discussionmentioning
confidence: 67%
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“…The quasielastic signal observed in the magnetic spectral response of Sm 3 Te 4 (figure 5) can be ascribed to spin fluctuations occurring within the degenerate ground state of the Sm 3+ ions. The spin-fluctuation time estimated from the experimental half-width /2 is in the order of 10 −12 s, orders of magnitude shorter than the value, τ = 10 −7 s at T = 100 K, derived from the 77 Se NMR in Sm 3 Se 4 [3]. However, these two values are not contradictory because the spin-fluctuation time corresponds to the relaxation of individual spins within the Sm 3+ configuration, which can be much faster, especially at low temperature, than the valence-fluctuation time associated with the exchange of 2+ and 3+ states.…”
Section: Discussionmentioning
confidence: 67%
“…Unlike most other Th 3 P 4 -type rare-earth chalcogenides (cubic I 43d space group), which are trivalent and metallic [1], the Sm 3 X 4 (X = S, Se, Te) compounds behave as semiconductors, with a room-temperature electrical resistivity already of the order of 1 cm, and an activation energy, deduced from ρ(T ), of 0.12-0.14 eV (Sm 3 S 4 [2], Sm 3 Se 4 [3]). This situation reflects the peculiar electronic band structure of these materials, in which the 4f level is located at the Fermi energy, inside the band gap (E g ≈ 4 eV for Sm 3 S 4 [2]), but close to the bottom of the 5d-6s conduction band.…”
Section: Introductionmentioning
confidence: 99%
“…Unlike most other Th 3 P 4 -type rare-earth chalcogenides, which are trivalent and metallic [364], the Sm 3 X 4 compounds behave as semiconductors, with a room-temperature electrical resistivity already of the order of 1 Ωcm. The activation-type temperature dependence of the dc resistivity ρ = ρ 0 exp(E/k B T) has a unique value of the activation energy E ≈ 0.14 eV for Sm 3 X 4 (X = S, Se, or Te) [315,438]. The optical measurements reveal a direct energy gap in Sm 3 S 4 and Eu 3 S 4 equal to 0.2 eV and 1.7 eV, respectively [439,440].…”
Section: Sm and Eu Pnictides And Chalcogenidesmentioning
confidence: 97%