Transport phenomena in III-V compound semiconductors

Mathur, P. C.; Shyam, Radhey; Jain, Sushil

doi:10.1002/pssa.2210500102

Cited by 12 publications

(1 citation statement)

References 94 publications

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“…It is commonly accepted that the two most important mechanisms in semiconductors that limit mobility are ionized impurity scattering and phonon scattering. 20 Complete expressions for imp and pho are available, [21][22][23] but it can be shown that the temperature dependence for these mechanisms are imp ϰT 3/2 for ionized impurity scattering, ͑10͒ pho ϰT Ϫ3/2 for phonon scattering.…”

Section: B Variation Of Mobility With Thickness and Temperaturementioning

confidence: 99%

Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Gopal

Souw

Chen

et al. 2000

Journal of Applied Physics

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Hall effect and electrical resistivity measurements were carried out on undoped InAs thin films grown by molecular-beam epitaxy directly on ͑001͒ GaP substrates. The large lattice mismatch between these two compounds results in a high density array of misfit dislocations at the heterointerface and threading dislocations in the InAs epilayer. The threading dislocation density varies with epilayer thickness, with the largest proportion being present near the heterointerface. This leads to variation of both the carrier concentration and electron mobility with thickness. Consequently, a multilayer analysis was used to interpret the transport data. This analysis yields a temperature-independent carrier concentration, which indicates degenerate donor levels in this narrow band-gap material. Room temperature mobilities in excess of 10 000 cm 2 /V s were obtained for thick InAs layers despite dislocation densities of 10 10 cm Ϫ2 . The relative insensitivity of the mobility to temperature suggests that temperature-independent scattering dominates over ionized impurity/defect and phonon scattering.

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Section: B Variation Of Mobility With Thickness and Temperaturementioning

confidence: 99%

Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Gopal

Souw

Chen

et al. 2000

Journal of Applied Physics

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Size Effect on the Magnetoresistance of p-InSb

Kreutz

1983

Phys. Stat. Sol. (a)

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The magnetoresistance of p‐Insb single crystal specimens with real surfaces is measured as a function of thickness, magnetic induction, temperature, and surface potential. Field effect and Hall coefficient are employed to determine the barrier height and the carrier concentrations during the investigations. The discrimination of the resistance change into ambipolar, scattering, inhomogeneity, and geometry effect is experimentally investigated by variation of sample thickness at different barrier height. The data are thoroughly discussed by the two‐conductor three‐band model taking into account the separation into electrons, light, and heavy holes.

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Gallium antimonide (GaSb), transport mechanisms

Landolt-Börnstein - Group III Condensed Matter

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Transport phenomena in III-V compound semiconductors

Cited by 12 publications

References 94 publications

Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Size Effect on the Magnetoresistance of p-InSb

Gallium antimonide (GaSb), transport mechanisms

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