Hall effect and electrical resistivity measurements were carried out on undoped InAs thin films grown by molecular-beam epitaxy directly on ͑001͒ GaP substrates. The large lattice mismatch between these two compounds results in a high density array of misfit dislocations at the heterointerface and threading dislocations in the InAs epilayer. The threading dislocation density varies with epilayer thickness, with the largest proportion being present near the heterointerface. This leads to variation of both the carrier concentration and electron mobility with thickness. Consequently, a multilayer analysis was used to interpret the transport data. This analysis yields a temperature-independent carrier concentration, which indicates degenerate donor levels in this narrow band-gap material. Room temperature mobilities in excess of 10 000 cm 2 /V s were obtained for thick InAs layers despite dislocation densities of 10 10 cm Ϫ2 . The relative insensitivity of the mobility to temperature suggests that temperature-independent scattering dominates over ionized impurity/defect and phonon scattering.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.