Transport news

Boland, John J.

doi:10.1038/439671a

Cited by 12 publications

(9 citation statements)

References 4 publications

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“…Recently, with the advent of nanosized materials, surface controlled conductivity has been invoked to account for the low resistance of nanometer-scale silicon-on-insulator membranes [12,13]. P-type conductivity of intrinsic Ge nanowires has been detected by field effect and attributed to surface charges [14].…”

Section: Resultsmentioning

confidence: 99%

p-type conduction in ion-implanted amorphized Ge

Romano

Impellizzeri

Grimaldi

2012

Materials Science in Semiconductor Processing

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Section: Resultsmentioning

confidence: 99%

p-type conduction in ion-implanted amorphized Ge

Romano

Impellizzeri

Grimaldi

2012

Materials Science in Semiconductor Processing

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“…Although a number of alternatives to silicon-based materials have been proposed, − silicon remains the stalwart of the electronics industry. Generally, the behavior of silicon is controlled by changing the composition of the active region by impurity doping, while changing the surface (interface) states is also possible. − As scaling to the sub-20-nm-size region is pursued, routine impurity doping becomes problematic due to its resultant uncertainty of distribution. , Provided back-end processing of future devices could be held to temperatures that are molecularly permissive (300−350 °C) and taking advantage of the dramatic increase in the surface-area-to-volume ratios of small devices, it is attractive to seek controllable modulation of device performance through surface modifications.…”

Section: Introductionmentioning

confidence: 99%

Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers

et al. 2006

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We have controllably modulated the drain current (I(D)) and threshold voltage (V(T)) in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong pi-electron donors to strong pi-electron acceptors, was covalently attached onto the channel region of the transistors. The device conductance was thus systematically tuned in accordance with the electron-donating ability of the grafted molecules, which is attributed to the charge transfer between the device channel and the molecules. This surface grafting protocol might serve as a useful method for controlling electronic characteristics in small silicon devices at future technology nodes.

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“…wherein they have shown how to control conductivity by effectively tuning the surface states on a silicon membrane of a few nanometer thickness for applications in micro- and nanoelectromechanical systems . The importance of surface states in semiconductor device applications is also explicit from a recent report by Boland . On the other hand, the effect of surface states on redox kinetics at semiconductor nanocrystals could be understood from a report by Wan et al wherein they have studied the influence of intrinsic surface states on electron/hole recombination rate in ZnO nanotetrapods using photoluminescence and found that the current decay is very slow compared to that in bulk ZnO because of a surface-state-related recombination process, thereby improving the photocatalytic effect of the nanomaterials .…”

Section: Introductionmentioning

confidence: 99%

Surface-State-Mediated Electron Transfer at Nanostructured ZnO Multipod/Electrolyte Interfaces

et al. 2007

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Redox kinetics of cyanoferrate(III) species adsorbed at an n-type ZnO multipod/electrolyte interface is explored using electrochemical techniques like cyclic voltammetry and impedance spectroscopy. The electrochemical impedance results are analyzed using a fluctuating energy level model, assuming isoenergetic tunneling of majority carriers through the Helmholtz layer. A shift in the slope of Mott−Schottky plots (C sc -2 versus E) together with evidence from cyclic voltammetry shows that the electron-transfer process is mediated by surface states formed because of the adsorption of ferricyanide ions (as evident from the results of Fourier transform infrared spectroscopy). More significantly, the pH of zero charge (point of zero zeta potential, pzzp) of ZnO multipods is found to be 4.5 (from capacitance vs pH plots) compared to that of bulk ZnO (pH 9.5), which could be explained on the basis of a lowering in the work function of the nanostructured semiconductor and its consequent susceptibility to the formation of surface states. This is in excellent agreement with our earlier observation of ultralow threshold field emission with this material in the light of the linear dependence of pzzp with work function of the electrode material. The flat-band potential of the nanostructures is found to be 200 mV more negative than that reported for bulk n-type ZnO electrodes, indicating a higher doping density in the former. A three-dimensional mapping of charge distribution in the surface states is attempted by correlating the capacitance response of the system subjected to a sinusoidal potential modulation to the semiconductor electrode with that resulting from a systematic variation of the redox potential of the dissolved acceptor (achieved by varying the pH of the electrolyte) which further reveals the polyenergetic nature of the surface states.

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Transport news

Cited by 12 publications

References 4 publications

p-type conduction in ion-implanted amorphized Ge

p-type conduction in ion-implanted amorphized Ge

Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers

Surface-State-Mediated Electron Transfer at Nanostructured ZnO Multipod/Electrolyte Interfaces

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