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B diffusion in crystalline Ge is investigated by proton irradiation in thin layers with B delta doping under different fluences (1×1015–10×1015 H+/cm2), fluxes (6×1011–35×1011 H+/cm2 s), and temperatures of the implanted target (from −196 to 550 °C), both during and after irradiation. B migration is enhanced by several orders of magnitude with respect to equilibrium. Moreover, B diffusion is shown to occur through a point-defect-mediated mechanism, compatible with a kick-out process. The diffusion mechanism is discussed. These results are a key point for a full comprehension of the B diffusion in Ge

The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the realization of ultrahigh doped regions in miniaturized germanium (Ge) based devices. In this work, we report a study about the effect of fluorine (F) on the diffusion of arsenic (As) in Ge and give insights on the physical mechanisms involved. With these aims we employed experiments in Ge co-implanted with F and As and density functional theory calculations. We demonstrate that the implantation of F enriches the Ge matrix in V, causing an enhanced diffusion of As within the layer amorphized by F and As implantation and subsequently regrown by solid phase epitaxy. Next to the end-of-range damaged region F forms complexes with Ge interstitials, that act as sinks for V and induce an abrupt suppression of As diffusion. The interaction of Ge interstitials with fluorine interstitials is confirmed by theoretical calculations. Finally, we prove that a possible F-As chemical interaction does not play any significant role on dopant diffusion. These results can be applied to realize abrupt ultra-shallow n-type doped regions in future generation of Ge-based devices.

The incorporation of nanostructured photocatalysts in polymers is a strategic way to obtain novel water purification systems. This approach takes the advantages of: (1) the presence of nanostructured photocatalyst; (2) the flexibility of polymer; (3) the immobilization of photocatalyst, that avoids the recovery of the nanoparticles after the water treatment. Here we present ZnO-polymer nanocomposites with high photocatalytic performance and stability. Poly (methyl methacrylate) (PMMA) powders were coated with a thin layer of ZnO (80 nm thick) by atomic layer deposition at low temperature (80 °C). Then the method of sonication and solution casting was performed so to obtain the ZnO/PMMA nanocomposites. A complete morphological, structural, and chemical characterization was made by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses. The remarkable photocatalytic efficiency of the nanocomposites was demonstrated by the degradation of methylene blue (MB) dye and phenol in aqueous solution under UV light irradiation. The composites also resulted reusable and stable, since they maintained an unmodified photo-activity after several MB discoloration runs. Thus, these results demonstrate that the proposed ZnO/PMMA nanocomposite is a promising candidate for photocatalytic applications and, in particular, for novel water treatment.

We report here a detailed study about the formation and self-organization of nanoscale structures during ion beam implantation at room temperature of 300 keV Ge+ in Ge as a function of the ion fluence in the range between 1×1014 to 4×1016 cm−2. “Microexplosions” characterize the morphology of the swelled material; a random cellular structure consisting of cells surrounded by amorphous Ge ripples has been observed and studied in details by combining atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.