Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers

Abstract

We have controllably modulated the drain current (I(D)) and threshold voltage (V(T)) in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong pi-electron donors to strong pi-electron acceptors, was covalently attached onto the channel region of the transistors. The device conductance was thus systematically tuned in accordance with the electron-donating ability of the grafted molecules, which is attributed to the charge transfer between the device channel and the molecules. This surface grafting protocol might serve as a useful method for controlling electronic characteristics in small silicon devices at future technology nodes.

Supersensitive fingerprinting of explosives by chemically modified nanosensors arrays

“…1c), were selectively anchored to separate nanosensors subarray spots, each subarray containing 18 devices, by the use of area-selected silane-coupling procedures [33][34][35] , as schematically depicted in Fig. 1 (Supplementary Figs 2 and 3).…”

Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes

“…S urfaces and interfaces strongly influence the electronic properties of semiconductor nanostructure [1][2][3][4][5][6][7][8] , and under some conditions they can become the dominant factor 3 . To investigate these influences quantitatively, a well-defined nanostructure is essential.…”

“…In the current measurements, the free surface is atomically clean, but that is not a requirement for general application of the method. Any changes 4,[11][12][13] in the front surface act as an additional gate to counter or enhance the effect of the back gate. The NM bulk conductance is continuously tunable by the back-gate voltage and hence can be made negligible relative to the surface contribution.…”

Tuning the surface conditioning of trapezoidally shaped silicon nanowires by (3-aminopropyl)triethoxysilane

“…This suggests a decrease of the positive surface charge density upon silane passivation. 11,30,31 Second, this V th shift is accompanied by a decrease in the hysteresis between the forward and the reverse curves once the SiO 2 surface is modified with APTES. 30 As shown in Figure 2( bg at different stages of the APTES surface conditioning.…”