Transparent indium zinc oxide ohmic contact to phosphor-doped n-type zinc oxide

Abstract

Transparent indium zinc oxide (IZO) ohmic contacts to phosphor-doped n-type ZnO have been formed. The resistance, transmittance, and phase reliability of the contacts were investigated. As deposited, an ohmic contact was formed with a specific contact resistance of about 1.1×10−4Ωcm2 and the transmittance of the ZnO∕IZO (520∕350nm) film was more than 75% in the 450–1100nm wavelength range. After annealing at 400°C for 5min in a vacuum (2×10−5mbar), the specific contact resistance was reduced by about two orders of magnitude to 3.8×10−6Ωcm2, while maintaining the contact stability and high optical transparency.

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

“…Refs. [12][13][14][15]) and are therefore opaque, low-resistance ohmic contacts based on transparent conductive oxides (TCOs) have also been reported [16,17]. Among TCOs, indium-zinc-oxide (IZO) is a very attractive material for ohmic contacts to ZnObased LEDs due to its good electrical conductivity, wide transmittance window, excellent surface smoothness, and low deposition temperature [17][18][19][20][21].…”

Indium zinc oxide thin films deposited by sputtering at room temperature

“…Security applications include inexpensive flexible sensors networked to provide monitoring over large areas. Amorphous n-type oxide semiconductors have shown promising results for situations where the standard Si-based thin film transistors (TFTs) have drawbacks such as light sensitivity, light-induced degradation and low field effect mobility (<1 cm 2 V À1 s À1 ) [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Materials such as zinc oxide, indium gallium oxide and zinc tin oxide show surprisingly high electron mobilities ($10 cm 2 V À1 s À1 ) even for amorphous films deposited at room temperature or slightly above.…”

Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2

“…One approach that has worked with contacts on GaN is the use of high-meltingpoint diffusion barriers in the Ohmic metal stack. [26][27][28][29][30][31][32][33][34][35][36] Herein, we report on the use of Ir diffusion barriers in Ni/Au Ohmic contacts to p-type CuCrO 2 to improve the thermal stability of the contacts. The best results were obtained using Ir.…”

“…The best results were obtained using Ir. Combined with the recent progress in metallization schemes for n-type and p-type ZnO, [30][31][32][33][34][35][36][37][38] the approach of using Ir as the diffusion barrier looks promising for producing low contact resistances on oxide heterojunctions. Other materials that were tried for the diffusion barrier, including TaN, ZrN, and W 2 B 5 , did not improve the stability of the contacts.…”