Abstract:The use of Ir diffusion barriers in Ni/Au-based Ohmic contacts to p-type CuCrO 2 layers was investigated. A specific contact resistance of $5 · 10 -4 X cm 2 was achieved after annealing at 500°C for the Ir-containing contacts, and the contacts were rectifying for lower anneal temperatures. In this case, the contact resistance was basically independent of the measurement temperature, indicating that tunneling is the dominant transport mechanism in the contacts. The morphology for the Ir-containing contacts was … Show more
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