2012
DOI: 10.1021/nl301045a
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Transparent Conducting Silver Nanowire Networks

Abstract: We present a transparent conducting electrode composed of a periodic two-dimensional network of silver nanowires. Networks of Ag nanowires are made with wire diameters of 45-110 nm and a pitch of 500, 700, and 1000 nm. Anomalous optical transmission is observed, with an averaged transmission up to 91% for the best transmitting network and sheet resistances as low as 6.5 Ω/sq for the best conducting network. Our most dilute networks show lower sheet resistance and higher optical transmittance than an 80 nm thic… Show more

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Cited by 484 publications
(388 citation statements)
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“…For a 50-nm thick Au nanomesh with a mesh size of B700 nm and a line-width of B90 nm, the lowest sheet resistance ever obtained is B7 O per square (sq). This is lower than that of carbon nanotube-and graphene-based transparent electrodes (4100 O per sq) 24 , commercial ITO films (15-50 O per sq) and solution-processed Au nanomeshes (4400 O per sq) 25 , and comparable to Ag nanonetworks with similar features made by electron beam lithography, which do not have contact junction problem 26 . The low resistance should be related to the absence of high junction resistance between the wires.…”
Section: Grain Boundary Lithography For Metal Nanomeshesmentioning
confidence: 77%
“…For a 50-nm thick Au nanomesh with a mesh size of B700 nm and a line-width of B90 nm, the lowest sheet resistance ever obtained is B7 O per square (sq). This is lower than that of carbon nanotube-and graphene-based transparent electrodes (4100 O per sq) 24 , commercial ITO films (15-50 O per sq) and solution-processed Au nanomeshes (4400 O per sq) 25 , and comparable to Ag nanonetworks with similar features made by electron beam lithography, which do not have contact junction problem 26 . The low resistance should be related to the absence of high junction resistance between the wires.…”
Section: Grain Boundary Lithography For Metal Nanomeshesmentioning
confidence: 77%
“…The electro-optical properties of LV and SSW networks are summarized in Fig. 3a, which presents the transmittance (T) versus sheet resistance (R s ) measurements, compared with those of other networks reported in the literature [4][5][6][7][8][9][10] , as well as the conventional transparent conducting electrode material ITO. Transmittance represents percentage of the light flux transmitted across the sample at a given frequency (or vacuum wavelength, here chosen to be l ¼ 550 nm).…”
Section: Resultsmentioning
confidence: 99%
“…However, while metal-oxides often have desirable electro-optical properties, they are also brittle, and this deficiency limits their usefulness in many practical applications. To address these challenges, new approaches have been recently devised, based on metallic micro-and nanoscaffoldings (such as wire and nanowire grids [3][4][5][6][7][8][9][10] , nanoparticles 11,12 and so on) and even using atomicscale scaffolds such as graphene 13,14 . Structures of this kind do in fact improve mechanical flexibility, but their electro-optical performance has not yet been sufficiently high.…”
mentioning
confidence: 99%
“…The perforated top patterns can be used as the front contact with good flexibility and good electrical conductivity; [70][71][72] therefore, the DPIM structure is potentially a good selection for flexible solar cells.…”
Section: Solar Energy Cf Guo Et Almentioning
confidence: 99%