Transmission Performance of Chirp-Controlled Signal Emitted by Electroabsorption Modulator Laser Integrated with a Semiconductor Optical Amplifier

Ngô, Minh Nguyêt; Nguyen, H. T.; Gosset, Christophe; Erasme, Didier; Deniel, Qian; Genay, N.

doi:10.1364/ofc.2012.ow4f.6

Cited by 4 publications

(4 citation statements)

References 5 publications

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“…SAG has been widely used for wavelength detuning both for "longitudinal" and "transversal" integrations of components. In the "longitudinal" integration, along the optical waveguide direction, active and passive components such as electro-absorption modulators (EAM), lasers, semiconductor optical amplifiers (SOA) and spot size converters have been successfully integrated [37][38][39]. SAG has also demonstrated its high potential for "transversal" integration, with large wavelength shift of numerous juxtaposed devices such as lasers in an array [27,40].…”

Section: Selective Area Growth Applied On Inposi Wafersmentioning

confidence: 99%

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

et al. 2021

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The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity and scalability. However, Si itself cannot provide an efficient emitting light source due to its indirect bandgap. Therefore, the integration of III-V semiconductors on Si wafers allows us to benefit from the III-V emitting properties combined with benefits offered by the Si photonics platform. Direct epitaxy of InP-based materials on 300 mm Si wafers is the most promising approach to reduce the costs. However, the differences between InP and Si in terms of lattice mismatch, thermal coefficients and polarity inducing defects are challenging issues to overcome. III-V/Si hetero-integration platform by wafer-bonding is the most mature integration scheme. However, no additional epitaxial regrowth steps are implemented after the bonding step. Considering the much larger epitaxial toolkit available in the conventional monolithic InP platform, where several epitaxial steps are often implemented, this represents a significant limitation. In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented. A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference. The 400 ppm thermal strain on the structure grown on InPoSi, induced by the difference of coefficient of thermal expansion between InP and Si, was assessed at growth temperature. We also showed that this structure demonstrates laser performance similar to the ones obtained for the same structure grown on InP. Therefore, no material degradation was observed in spite of the thermal strain. Then, we developed the Selective Area Growth (SAG) technique to grow multi-wavelength laser sources from a single growth step on InPoSi. A 155 nm-wide spectral range from 1515 nm to 1670 nm was achieved. Furthermore, an AlGaInAs MQW-based laser source was successfully grown on InP-SOI wafers and efficiently coupled to Si-photonic DBR cavities. Altogether, the regrowth on InP-SOI wafers holds great promises to combine the best from the III-V monolithic platform combined with the possibilities offered by the Si photonics circuitry via efficient light-coupling.

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Section: Selective Area Growth Applied On Inposi Wafersmentioning

confidence: 99%

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

et al. 2021

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“…Parameter C can be introduced to describe the linear frequency chirp imposed on the pulse. It depends on whether the instantaneous frequency of optical pulse is increasing or decreasing with time [5]. In the normal dispersion region, the GVD parameter β 2 is positive and the chirp is also positive, C > 0.…”

Section: A Optical Pulse Chirpmentioning

confidence: 99%

“…For example, the initial positive chirp of the generated laser pulse can be reduced, or the length of SMF-28 fiber can be changed to alter it through its propagation in an optical fiber with anomalous dispersion. It has been shown that a Semiconductor Optical Amplifier (SOA) can also change the chirp of the optical laser pulse passing through the SOA by changing its bias current [5]. In [6] the effect of temperature-induced fiber dispersion on the OCDMA auto-correlation was mitigated by changing the gain of an SOA placed on the receiver side of the link.…”

Section: Introductionmentioning

confidence: 99%

Management of OCDMA Auto-Correlation Width by Chirp Manipulation Using SOA

Ahmed

Glesk

2018

IEEE Photon. Technol. Lett.

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In order to preserve the performance of incoherent OCDMA systems it is imperative to maintain the width of the OCDMA auto-correlation function. This can be challenging in OCDMA systems when using multi-wavelength pico-second pulses as code carriers. In this respect, a Semiconductor Optical Amplifier (SOA) was used to control the chirp of OCDMA code carriers before fiber transmission, and the resulting effect on the recovered OCDMA auto-correlation was investigated at the receiving end after a 16 km long transmission in a fiber optic testbed with imperfectly balanced chromatic dispersion (CD).

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“…Gain and phase compensation was achieved by adjusting the optical power in front of the SOA [12], [13] but such control becomes impossible in a fully integrated chip. We have reported recently, signal chirp control in a fully integrated EML-SOA devices [15]. A 10.3 Gb/s transmission over 100 km of standard fiber with 7 dB of power penalty (at BER of ) was reported.…”

Section: Introductionmentioning

confidence: 98%

ElectroAbsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission

Ngô

Nguyen

Gosset

et al. 2013

J. Lightwave Technol.

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We report, for the first time, a transmission experiment over standard fiber at 1.55 m using an electroabsorption modulated laser (EML) integrated with a semiconductor optical amplifier (SOA). We show clearly that negative pre-chirped signals can be obtained by adjusting both modulator and amplifier driving parameters. Negative chirp operation is evaluated through small-signal chirp measurement as well as through time-resolved dynamic chirp measurement. Signal chirp control at emission enhances transmission and increases optical reach. Thanks to the SOA gain and chirp compensation for modulator loss and chirp, dispersion-penalty-free with clear open eye diagrams over 100 km of optical fiber at 10.3 Gb/s is achieved. A transmission up to 125 km is also obtained. This novel fully integrated EML-SOA is very promising as a high-performance, compact and low-cost optical transmitter for the future access-metropolitan network convergence.

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Transmission Performance of Chirp-Controlled Signal Emitted by Electroabsorption Modulator Laser Integrated with a Semiconductor Optical Amplifier

Cited by 4 publications

References 5 publications

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Management of OCDMA Auto-Correlation Width by Chirp Manipulation Using SOA

ElectroAbsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission

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