ElectroAbsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission

Abstract

We report, for the first time, a transmission experiment over standard fiber at 1.55 m using an electroabsorption modulated laser (EML) integrated with a semiconductor optical amplifier (SOA). We show clearly that negative pre-chirped signals can be obtained by adjusting both modulator and amplifier driving parameters. Negative chirp operation is evaluated through small-signal chirp measurement as well as through time-resolved dynamic chirp measurement. Signal chirp control at emission enhances transmission and increases optical reach. Thanks to the SOA gain and chirp compensation for modulator loss and chirp, dispersion-penalty-free with clear open eye diagrams over 100 km of optical fiber at 10.3 Gb/s is achieved. A transmission up to 125 km is also obtained. This novel fully integrated EML-SOA is very promising as a high-performance, compact and low-cost optical transmitter for the future access-metropolitan network convergence.

A tutorial on laser-based lighting and visible light communications: device and technology [Invited]

“…Two-section laser and photonics integration GaAs-and InP-based photonics integration has been achieved in optical telecommunication wavelength regimes for many commercial applications [84]. For example, an electroabsorption modulated laser integrated with a semiconductor optical amplifier (SOA) has been developed as a compact, high-performance, and low-cost optical transmitter for access-metropolitan network convergence [85]. However, the realization of photonics integration in the visible wavelength regime remains a challenging topic.…”

High Power and High Efficiency Operation of Semiconductor Optical Amplifier Assisted Extended Reach Electroabsorption Modulated DFB Laser (AXEL) for Extension of Transmission Distance

“…For the L-band wavelength range in particular, low chirp characteristics are very important for the light source because large chromatic dispersion of the optical fiber severely limits the transmission distance. One advantage of the AXEL is that the SOA can act not only as an optical booster but also as a chirp compensator [9][10][11][12]. Therefore, the low chirp characteristics of the AXEL enable us to extend the transmission distance for the L-band wavelength range.…”

Single-Crystalline All-Oxide α–γ–β Heterostructures for Deep-Ultraviolet Photodetection

“…The emergence of highly integrated silicon-based photonic platforms has led to extensive applications in the semiconductor and telecommunications industries. However, despite allowing large-volume manufacturing at relatively low cost, the energy bandgap located near 1.14 eV hinders the integration of devices requiring optical transparency in the ultraviolet (UV) and visible regimes, such as visible-light and deep-UV (DUV) photodetectors, [1][2][3][4] group-III-V-based lightemitting diodes, [5][6][7][8] solar cells, 9 electro-absorption modulators, [10][11][12] and transparent thin-film transistors. [13][14][15] Despite significant efforts to realize the heterogeneous integration of the aforementioned devices on silicon-based platforms, [16][17][18][19] challenges related to high defect densities, optical coupling, wafer bonding, and substrate removal remain critical and can lead to consequential overhead production costs.…”

“…Emergence of highly integrated silicon-based photonic platforms has led to extensive applications in the semiconductor and telecommunications industries. However, despite allowing large-volume manufacturing at relatively low cost, the energy band gap located near 1.14 eV hinders the integration of devices requiring optical transparency in the ultraviolet (UV) and visible regimes, such as visible-light and deep-UV (DUV) photodetectors, − group-III–V-based light-emitting diodes, − solar cells, electro-absorption modulators, − and transparent thin-film transistors. − Despite significant efforts to realize the heterogeneous integration of the aforementioned devices on silicon-based platforms, − challenges related to high defect densities, optical coupling, wafer bonding, and substrate removal remain critical and can lead to consequential overhead production costs . Recently, oxide-based photonic platforms relying on aluminum oxide (Al 2 O 3 ), with an ultra-large optical band gap of up to ∼7.6 eV, have attracted considerable attention as paradigm-shifting platforms for various transparent optoelectronic devices. − The realization of low-loss Al 2 O 3 waveguides, with an extended wavelength of up to 220 nm and substantially lower transmission losses compared to silicon nitride (Si 3 N 4 )-based waveguides, , is highly encouraging and paves the way for an integrated transparent oxide-based photonic platform across the visible wavelength region.…”