Transmission electron microscopy study of the interface of Bi2Sr2CaCu2O8+δ thin films on (110) oriented SrTiO3 substrates

Brecht, E.; Træholt, Chresten; Schneider, R.; Linker, G.

doi:10.1016/s0022-0248(98)00177-8

Cited by 5 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example for our films grown on NGO phase and orientation evolution with growth temperature is presented in Fig. The reason for formation of several phases/orientations were investigated for the non c-axis Bi-22 1 2 films and can be summarized as follows: substrate non-uniformity (domains with different roughness giving thermodynamically preferred growth orientations) [4], mismatch strain between film and substrate [4], low difference in the free energy between Bi-2201, Bi-2212 and Bi-2223 phases [4], orientation and type of the substrate resulting in different substrate-film bonding at interface and therefore inducing homo-(when strong ionic bonds S-F form) or hetero-epitaxial (when weak Van der Waals bonds S-F form) growth [4], the thermodynamic stability (anisotropic growth kinetics) and epitaxy at the F-S interface combined with the half-unit cell stability of the HTS (understood from the viewpoint of the electrical neutrality) that is different when the interface layer is Bi-O sheet or the perovskite layer which consist of Sr, Ca and Cu [7]. The growth temperatures indicated here are to some extent relative because from one experiment, or MOCVD equipment to another the arrangements are not perfectly identical.…”

Section: Bi-2223 Thin Films Grown On Flat Substratesmentioning

confidence: 99%

(119) Bi-2223 thin films grown by MOCVD on (100) NdGaO 3 and (110) SrTiO 3

Endo

Badica

2002

SPIE Proceedings

View full text Add to dashboard Cite

In high temperature superconductors (HTS) the coherence length along non-c axis directions is longer. This feature can be useful when designing electronics devices based on HTS. Therefore growth and characterization of non-c axis oriented thin HTS films is of great interest. In this paper we present a short review of our data regarding (1 19) Bi-2223 thin films grown by MOCVD on (100) NdGaO3 and (1 10) SrTiO3. The emphasis is made on improvement and control of the quality of the films by the "two-temperature" technological approach and/or use of the vicinal substrates. Phase and morphology evolution for different processing conditions, substrate's type and off-angle are presented. The highest critical temperatures of T0=67.2 K and T0=74 K for the "single-" and "two-" temperature routes were obtained on vicinal SrTiO3 with the off-angle of 200. A higher off-angle promoted the formation of a specific step-like morphology with lower roughness. For the films grown on flat substrates the morphology was of mountain-range shape. Surface morphology as a result of two types of growth mechanisms (two-dimensional (2D), assisted by a so-called "twin"-growth and step-flow growth) for the (1 19) Bi-2223 films are discussed. Proc. of SPIE Vol. 4811 131 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/15/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

show abstract

Section: Bi-2223 Thin Films Grown On Flat Substratesmentioning

confidence: 99%

(119) Bi-2223 thin films grown by MOCVD on (100) NdGaO 3 and (110) SrTiO 3

Endo

Badica

2002

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…4,5 Furthermore, the STO buffer layer deposited on an Si͑110͒ plane, which is the sidewall of V-grooves, can provide a different growth orientation of superconductor films to improve the potential application. 6 The anisotropic wet etching technique has been widely employed in the formation of silicon patterns. [7][8][9][10][11][12][13][14][15][16] Using KOH-based aqueous solution, a Si͑111͒ plane is usually formed due to its lowest etching rate.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of continuous V-grooves with Si(110) sidewalls using <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> resist mask by anisotropic wet etching

Zhang

Guo

et al. 2009

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

Modification for substrate surface morphology is a kind of effective technique for controlling thin film growth orientation. In this work, continuous V-grooves are fabricated on monocrystalline Si͑100͒ substrate using TiO 2 resist mask by anisotropic wet etching. Influence of thickness of TiO 2 resist mask on etching patterns is investigated. The integrity and cross section of V-grooves are observed by laser scanning confocal microscope ͑LSCM͒ and scanning electronic microscopy ͑SEM͒, respectively. The floccules precipitating in V-grooves are verified by an energy dispersive spectrometer ͑EDS͒. Results indicate that the Si͑100͒ substrate surface is modified to the array of V-grooves along the Si͓010͔ direction with Si͑110͒ sidewalls. © 2009 Society of Photo-Optical Instrumentation Engineers.

show abstract

Atomic-scale analysis of the interface structure and lattice mismatch relaxation of Bi2Sr2CaCu2O8+δ/SrTiO3 heterostructure

Zhang

Wang

et al. 2021

Ceramics International

View full text Add to dashboard Cite

Transmission electron microscopy study of the interface of Bi2Sr2CaCu2O8+δ thin films on (110) oriented SrTiO3 substrates

Cited by 5 publications

References 22 publications

(119) Bi-2223 thin films grown by MOCVD on (100) NdGaO 3 and (110) SrTiO 3

(119) Bi-2223 thin films grown by MOCVD on (100) NdGaO 3 and (110) SrTiO 3

Fabrication of continuous V-grooves with Si(110) sidewalls using <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> resist mask by anisotropic wet etching

Atomic-scale analysis of the interface structure and lattice mismatch relaxation of Bi2Sr2CaCu2O8+δ/SrTiO3 heterostructure

Contact Info

Product

Resources

About