Fabrication of continuous V-grooves with Si(110) sidewalls using <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> resist mask by anisotropic wet etching

Abstract

Modification for substrate surface morphology is a kind of effective technique for controlling thin film growth orientation. In this work, continuous V-grooves are fabricated on monocrystalline Si͑100͒ substrate using TiO 2 resist mask by anisotropic wet etching. Influence of thickness of TiO 2 resist mask on etching patterns is investigated. The integrity and cross section of V-grooves are observed by laser scanning confocal microscope ͑LSCM͒ and scanning electronic microscopy ͑SEM͒, respectively. The floccules precipitating in V-grooves are verified by an energy dispersive spectrometer ͑EDS͒. Results indicate that the Si͑100͒ substrate surface is modified to the array of V-grooves along the Si͓010͔ direction with Si͑110͒ sidewalls. © 2009 Society of Photo-Optical Instrumentation Engineers.