Transmission electron microscopy on early-stage tin oxide film morphology grown by atmospheric pressure chemical vapor deposition

Mannie, Gilbère J. A.; Deelen, J. van; Niemantsverdriet, J.W.; Thüne, Peter C.

doi:10.1016/j.apsusc.2014.05.024

Cited by 3 publications

(5 citation statements)

References 31 publications

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“…Samples for transmission electron microscopy (TEM) analysis were prepared on custommade TEM grids (Lionix BV) which consist of a silicon frame and a central part that was etched away to create a 15-20 nm thick silicon nitride membrane window (100 Â 100 mm 2 ) where the electron beam can pass. [28][29][30][31] Prior to tungsten sputtering, the TEM grids were calcined in dry air to form a 3 nm thick surface layer of silicon oxide. 28 Characterization X-ray photoelectron spectroscopy (XPS) was recorded on a Thermo Scientific K-Alpha instrument equipped with a monochromatic X-ray source (hn(Al Ka) = 1486.6 eV).…”

Section: Materials Synthesismentioning

confidence: 99%

Enhancing the electrocatalytic activity of 2H-WS₂ for hydrogen evolution via defect engineering

Hoof

Dzade

et al. 2019

Phys. Chem. Chem. Phys.

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Section: Materials Synthesismentioning

confidence: 99%

Enhancing the electrocatalytic activity of 2H-WS₂ for hydrogen evolution via defect engineering

Hoof

Dzade

et al. 2019

Phys. Chem. Chem. Phys.

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“…AFM images of 130 and 215 cycles illustrate the formation of lots of SnO 2 particles (Figure S5a,b). This behavior demonstrates the growth of SnO 2 thin films resulted at the initial stage as the island shape by the Volmer–Weber mechanism rather than an ideal layer-by-layer growth . Cross-sectional TEM images (Figure S5c–f′) demonstrate that the seed layers are quite uniform and show conformal growth, even at lower number of deposition cycles that could be attributed to the accumulation of uniform SnO 2 island nanoparticles, as viewed in the cross-sectional images.…”

Section: Results and Discussionmentioning

confidence: 81%

“…This behavior demonstrates the growth of SnO 2 thin films resulted at the initial stage as the island shape by the Volmer−Weber mechanism rather than an ideal layer-by-layer growth. 23 Cross-sectional TEM images (Figure S5c−f′) demonstrate that the seed layers are quite uniform and show conformal growth, even at lower number of deposition cycles that could be attributed to the accumulation of uniform SnO 2 island nanoparticles, as viewed in the cross-sectional images. To further understand the dispersion morphologies and crystallinity, TEM analysis (Figure 3e−h) of seed layers deposited directly onto SiO grids (ALD cycles are considered according to the Si wafer thickness) was investigated.…”

Section: ■ Results and Discussionmentioning

confidence: 91%

Atomic Layer Deposition Seeded Growth of Rutile SnO₂ Nanowires on Versatile Conducting Substrates

Bera

Lee

et al. 2020

ACS Appl. Mater. Interfaces

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Extended and oriented rutile nanowires (NWs) hold great promise for numerous applications because of their various tunable physicochemical properties in air and/or solution media, but their direct synthesis on a wide range of conducting substrates remains a significant challenge. Their device performance is governed by relevant NW geometries that cannot be fully controlled to date by varying bulk synthetic conditions. Herein, orientation engineering of rutile SnO2 NWs on a variety of conducting substrates by atomic layer deposition (ALD) seeding has been investigated. The seeded growth controls the nucleation event of the NW, and thicknesses and crystallographic properties of seed layers are the key parameters toward tuning the NW characteristics. The seed layers on carbon cloth produce NWs with highly enhanced electrochemically active surface area, which would show efficient electrochemical CO2 reduction. In addition, the hierarchical architecture resulted from the seeded growth of NWs on SnO2 nanosheets allows thin layers of BiVO4, forming a heterojunction photoanode, which shows a record charge separation efficiency of 96.6% and a charge-transfer efficiency of 90.2% at 1.23 V versus the reversible hydrogen electrode among, to date, the reported BiVO4-based photoanodes for water oxidation. Our study illustrates that such a versatile interfacial engineering effort by the ALD technique would be promising for further wide range of practical applications.

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“…The electrical properties of tin oxide film are highly dependent on oxygen stoichiometry [3]. Various types of deposition techniques are chemical vapor deposition [8], sputtering [9], sol-gel method [10], spin coating [11], and spray pyrolysis [12].…”

Section: Introductionmentioning

confidence: 99%

“…Several previous studies have conducted experiments using DMTC (dimethyltin dichloride) precursors, but most used CVD (chemical vapor deposition) method in their research. Mannie, G.J.A studied the surface characteristics of tin oxide thin films through CVD method utilizing TTC (tin tetrachloride) precursors, DMTC, and MBTC (monobutyl tin trichloride) [8]. Van Mol et.…”

Section: Introductionmentioning

confidence: 99%

Morphology and Resistivity Value of Flourine-Doped Tin Oxide (Fto) Using Indonesian Local Dimethyltin Dichloriide (Dtmc) Precursors

Rizki

Yunita

Lalasari

et al. 2022

metal.

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Transparent Conductive Oxide (TCO) is the main component for solar cell fabrication. One of the promising types of TCO is fluorine-doped tin oxide (FTO). The method used in depositing the conductive layer of FTO is spray pyrolysis with an ultrasonic nebulizer. The precursor is a local Indonesian product, dimethyl tin dichloride (DMTC), with doping ammonium fluoride (NH4F). The variable that used in this study were variations in deposition time (5. 10. 15. 20, and 25 minutes) with a fixed substrate temperature at 300°C and doping variations (un-doped, 2 wt.% doped and 8 wt.% doped) to see the effect of adding F doping to the precursor solution. The resistivity value with deposition time of 5. 10. 15. 20 and 25 minute (2 wt.% doped) is 0.218x100; 0.449x10-1; 1,567x10-2; 0.676x10-2 0.377x10-2 Ω.cm. For doping variations (un-doped, 2 wt% doped and 8 wt% doped) the value is 0.883x10-2; 0.377x10-2; 0.506x10-3 Ω.cm. There is a decreasing trend in the resistivity values obtained along with the increase in deposition time and the addition of doping to obtain better conductive properties. The grain size will increase with increasing deposition time and the addition of doping. The optimum resistivity value obtained in this study was 0.377x10-2 Ω.cm, obtained at the deposition time of 25 minutes with 2 wt.% doping.

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Transmission electron microscopy on early-stage tin oxide film morphology grown by atmospheric pressure chemical vapor deposition

Cited by 3 publications

References 31 publications

Enhancing the electrocatalytic activity of 2H-WS₂ for hydrogen evolution via defect engineering

Enhancing the electrocatalytic activity of 2H-WS₂ for hydrogen evolution via defect engineering

Atomic Layer Deposition Seeded Growth of Rutile SnO₂ Nanowires on Versatile Conducting Substrates

Morphology and Resistivity Value of Flourine-Doped Tin Oxide (Fto) Using Indonesian Local Dimethyltin Dichloriide (Dtmc) Precursors

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Transmission electron microscopy on early-stage tin oxide film morphology grown by atmospheric pressure chemical vapor deposition

Cited by 3 publications

References 31 publications

Enhancing the electrocatalytic activity of 2H-WS2 for hydrogen evolution via defect engineering

Enhancing the electrocatalytic activity of 2H-WS2 for hydrogen evolution via defect engineering

Atomic Layer Deposition Seeded Growth of Rutile SnO2 Nanowires on Versatile Conducting Substrates

Morphology and Resistivity Value of Flourine-Doped Tin Oxide (Fto) Using Indonesian Local Dimethyltin Dichloriide (Dtmc) Precursors

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Product

Resources

About

Enhancing the electrocatalytic activity of 2H-WS₂ for hydrogen evolution via defect engineering

Enhancing the electrocatalytic activity of 2H-WS₂ for hydrogen evolution via defect engineering

Atomic Layer Deposition Seeded Growth of Rutile SnO₂ Nanowires on Versatile Conducting Substrates