Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>In</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi>As</mml:mi></mml:mrow></mml:math>

Litvinov, D.; Gerthsen, D.; Rosenauer, A.; Schowalter, Marco; Passow, T.; Feinäugle, P.; Hetterich, M.

doi:10.1103/physrevb.74.165306

Cited by 30 publications

(18 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This also implies that the kinetic model is also accurate only for x Ͻ 0.11, at least for high temperatures, when the thermodynamic and kinetic models are equivalent. The exchange model was shown to give a very good agreement with experimental transmission electron microscopy data on In rich ͑25%͒ InGaAs layers by Litvinov et al 78 Furthermore the authors show how the agreement is substantially improved compared to using the kinetic model, a result that confirm the earlier conclusions of Gerard et al 42 The three-layer model is predicting a substantial delay in the incorporation of In in the early stages of the growth of the QW and also a more pronounced tail of In segregated into the upper GaAs layer. Godbey and Ancona 75 noticed that such increased tail is more in agreement with experimental data on SiGe structures.…”

Section: ͑12͒supporting

confidence: 59%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

View full text Add to dashboard Cite

Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which extends through the GaAsSb and into the GaAs matrix. We compare various existing models used to describe the exchange of group III and V atoms in semiconductors and conclude that commonly used methods that only consider segregation between two adjacent monolayers are insufficient to describe the experimental observations. We show that a three-layer model originally proposed for the SiGe system ͓D. J. Godbey and M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 ͑1997͔͒ is instead capable of correctly describing the extended diffusion of both In and Sb atoms. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain-reduction layer.

show abstract

Section: ͑12͒supporting

confidence: 59%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

View full text Add to dashboard Cite

show abstract

“…Below x = 0.25 the critical surface composition cannot be reached, which prevents QD formation. In a later study [61,62], it was found that the measured segregation profile could be better explained by a different model by Muraki et al [63], and that the critical surface layer to attain 3D nucleation is about 1.1 ML InAs.…”

Section: Uncapped Ingaas/gaasmentioning

confidence: 95%

Compositional mapping of semiconductor quantum dots and rings

Biasiol

Heun

2011

Physics Reports

View full text Add to dashboard Cite

“…In the literature, these floating indium atoms were generally assumed to be produced by surface segregation, which may result from three main driving forces: i) relative surface stress, ii) chemical interactions, and iii) size mismatch. For example, Muraki et al [312] demonstrated that because of surface segregation of indium on the growth surface of an In x Ga 1−x As alloy, the surface chemical composition may reach the point x > 1, which is possible only when excess indium is floating on the surface [313] instead of chemically bonded to it. Garcia et al [314], by in-situ measurements of the epitaxial stress, experimentally demonstrated that only 50% of the indium could be incorporated into the lattice after 2.3 ML of InAs were deposited on the GaAs(001) substrate.…”

Section: Indium Floatingmentioning

confidence: 99%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

View full text Add to dashboard Cite

Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2-bonded to sp 3-bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

show abstract

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation inInxGa1−xAs

Abstract: We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs (001) -1 -

Cited by 30 publications

References 28 publications

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Compositional mapping of semiconductor quantum dots and rings

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Contact Info

Product

Resources

About