Transient and steady state study of a rear-illuminated 6H-SiC Photoconductive Semiconductor Switch

Hemmat, Zahra; Faez, Rahim; Moreno, Eva María Olmedo; Rasouli, Farhood; Radfar, Farzad; Zaimbashi, Mohsen

doi:10.1016/j.ijleo.2016.01.174

Cited by 14 publications

(7 citation statements)

References 15 publications

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“…The lateral and vPCSSs were fabricated on 500-μmthick HPSI 4H-SiC substrates with a resistivity higher than 10 7 •cm and a micropipe density of 0.1 cm −2 . Metal electrodes were patterned by optical lithography, and a Ni/Ti/Au (40/40/150 nm) metallization was evaporated and lifted off, followed by rapid thermal annealing.…”

Section: Methodsmentioning

confidence: 99%

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Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

Choi

Kim

et al. 2021

IEEE Trans. Electron Devices

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High purity semi-insulating (HPSI) 4H-silicon carbide (SiC) was used to fabricate lateral and vertical photoconductive semiconductor switches (PCSSs). The lateral PCSSs were illuminated from the frontside (fPCSS) or the backside (bPCSS). The side-illuminated vertical PCSS (vPCSS) was designed to increase the light-matter interaction volume. A 532-nm pulsed laser with adjustable energy was utilized to excite the PCSSs. The turn-on time was found to be highly dependent on the optical illumination energy, and the full-width at half-maximum of the PCSSs output waveforms was related to the peak output voltage. The output electrical pulse from the vPCSS exhibited a shorter turn-on time and a larger pulsewidth than the two types of lateral PCSSs. The vPCSS outperformed the fPCSS and bPCSS in terms of minimum ON-state resistance and output pulse amplitude under the same optical illumination energy. The vPCSS, which utilizes a large effective contact area to collect photogenerated carriers, also had higher photon absorption efficiency by arranging the optical path at a right angle to the carrier transport. The vPCSS exhibited a minimum ON-state resistance of 0.34 at optical illumination energy of 8 mJ.

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Section: Methodsmentioning

confidence: 99%

“…The PCSS can operate in linear and nonlinear modes. The conductivity of PCSSs operating in the linear mode is proportional to the incident optical power, while the avalanche process dominates in the nonlinear mode, which is also called the high gain mode [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

Choi

Kim

et al. 2021

IEEE Trans. Electron Devices

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“…In this context, simulation studies of rates of changes in excess charge carrier concentrations are becoming very important for selection of measurement conditions that provide a proper quality of measured signals 7 , 8 . Currently available kinetics models of the transient photoconductivity phenomenon in semiconductor materials 9 – 14 include only small number of defect centres, omitting the recombination centres. We exploit a model described by a system of differential equations proposed in our earlier works 15 – 17 , which is more complex as it enables us to simulate the kinetics phenomena in the presence of three types of defect centres, i.e.…”

Section: Introductionmentioning

confidence: 99%

Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC

Suproniuk

Wierzbowski

Paziewski

2020

Sci Rep

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The effect of generation rate on transient photoconductivity of semi-insulating (SI) 4H-SiC is discussed. The rate of generation of electron-hole pairs is dependent on the number of photons incident on the sample material and its absorption and reflection coefficients. The number of photons and their energy is dependent on the radiation power and wavelength of the light source illuminating the material. The results of research, obtained with a specialized simulator, present the influence of changes in the filling of individual defect centres' levels on changes in conductivity of the test material observed after switching on the photoexcitation. For the purpose of simulations, presented is a versatile model of semiconductor material. It encompasses six point defects that appear in SI 4H-SiC materials the most often. Those defect centres correspond to Z 1/2 recombination centre, deep electron and deep hole traps, nitrogen-related shallow donors of two kinds and a boron-related shallow acceptor. The simulation results can be used to design and determine properties of photoconductive switches. In recent years, there is intensive research being conducted which aims at developing semiconductor materials with new properties that allow to design devices for new system solutions in power electronics. The new material properties are obtained with defect structure engineering, which involves introducing defect centres with certain properties into a semiconductor material. Currently, research is focused on providing materials for a new type of devices which can operate in a broader temperature range and at higher frequencies while withstanding both higher current densities and higher electric fields. An important group of the materials are semi-insulating monocrystals, characterized with resistivities above 10 5 Ω cm, which are intended for use in microelectronics as substrates for new generation of integrated circuits and in electroenergetics as bulk materials for photoconductive semiconductor switches (PCSSes) 1,2. Currently, one of the most widely used materials for the application is semi-insulating silicon carbide (SI SiC) 3. Its properties are desired in electroenergetics for manufacturing hybrid switches 4. Additionally, its wide band gap enables devices based one the semi-insulating silicon carbide to operate in a range of temperatures up to 600 °C. Designing such devices requires an efficient method of investigation of the material electrical properties. One of the most often used method is photo-induced transient spectroscopy (PITS) 5,6. The method is intended for investigating defect structure of semiconductor materials and involves filling defect centres' levels with excess electrons or holes generated during illumination of the test material with a pulse of light and then measuring the transient waveform of photocurrent relaxation induced by thermal emission of charge carriers after turning the photoexcitation off 5,6. As the principle of operation of the photoconductive switches is based on the photoconductivit...

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“…[1][2][3][7][8][9][10][11][12][13][14][15][16][17][18] Nowadays, optical properties of SiC thin films have attracted researchers' attention in many fields such as photodiodes, phototransistors, photoconductive switches, solar cells, extreme ultraviolet (EUV) reflectors, and astrophysics. [19][20][21][22][23][24] The optical dispersion behavior of SiC thin films must be explored in depth to design and fabricate such optoelectronic and photonic devices, as the semiconductor materials are characterized by their unique complex dielectric functions.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

Mourya

Jaiswal

Malik

et al. 2018

Journal of Applied Physics

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In this work, we have reported the in-situ fabrication of nanocrystalline rhombohedral silicon carbide (15R-SiC) thin films by RF-magnetron sputtering at 800 C substrate temperature. The structural and optical properties were investigated for the films grown on four different substrates (ZrO 2 , MgO, SiC, and Si). The contact angle measurement was performed on all the substrates to investigate the role of interfacial surface energy in nucleation and growth of the films. The XRD measurement revealed the growth of (1 0 10) orientation for all the samples and demonstrated better crystallinity on Si substrate, which was further corroborated by the TEM results. The Raman spectroscopy confirmed the growth of rhombohedral phase with 15R polytype. Surface characteristics of the films have been investigated by energy dispersive x-ray spectroscopy, FTIR, and atomic force microscope (AFM) to account for chemical composition, bonding, and root mean square surface roughness (d rms). The optical dispersion behavior of 15R-SiC thin films was examined by variable angle spectroscopic ellipsometry in the wide spectral range (246-1688 nm), including the surface characteristics in the optical model. The non-linear optical parameters (v 3 and n 2) of the samples have been calculated by the Tichy and Ticha relation using a single effective oscillator model of Wemple and Didomenico. Additionally, our optical results provided an alternative way to measure the ratio of carrier concentration to the effective mass (N/m*). These investigated optical parameters allow one to design and fabricate optoelectronic, photonic, and telecommunication devices for deployment in extreme environment.

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Transient and steady state study of a rear-illuminated 6H-SiC Photoconductive Semiconductor Switch

Cited by 14 publications

References 15 publications

Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC

Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

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