Transient and flexible polymer memristors utilizing full-solution processed polymer nanocomposites

Abstract

Building transient and flexible memristors is a promising strategy for developing emerging memory technologies. Here, a transient and flexible memristor based on a polymer nanocomposite, with a configuration of silver nanowire (AgNW)/citric acid quantum dot (CA QD)-polyvinyl pyrrolidone (PVP)/AgNW, is fabricated using a full-solution process method. The obtained device exhibits reversible resistive switching behavior and a dynamic random access memory (DRAM) storage feature, with the significant merits of a high ON/OFF ratio, low switching voltage, excellent reproducibility and desirable high flexibility, indicating outstanding memory characteristics such as low misreading, low power operation and low cost potential. Moreover, an operating mechanism of charge trapping/de-trapping of the quantum dots in the polymer matrix has been proposed. Importantly, the memristor can be disintegrated in water within 30 minutes, showing that it is a promising candidate for transient memories. This work paves a new way for potential use of this material in transient electronics, implanted electronics, data storage security and flexible electronic systems.

Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface

“…[1][2][3][4] Building polymer memory devices with low resistive switching voltage hold great importance in their fundamental study as well as the technical advancement of ultra-low power memory devices during their practical 3D integration. [7][8][9] However, most polymer memory devices remain at high resistive switching voltages in accordance to the research reported previously. [7][8][9] However, most polymer memory devices remain at high resistive switching voltages in accordance to the research reported previously.…”

“…Building polymer memory devices with low resistive switching voltage hold great importance in their fundamental study as well as the technical advancement of ultra‐low power memory devices during their practical 3D integration . To date, enormous efforts have been devoted to the rational design of memristive materials and their property studies, especially the achievement of Flash, write‐once‐read‐many times (WORM), and dynamic random access memory (DRAM) memory effect . However, most polymer memory devices remain at high resistive switching voltages in accordance to the research reported previously .…”

MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices

“…As MQDs are gradually released from the active film into water and PVP film is dissolved in water due to the formation of hydrogen bonds between water molecules and polar side groups of PVP, the intensity of blue light from culture dish becomes stronger owing to intrinsically blue emission of MQDs under UV irradiation and increasing concentration of MQDs in solvent, and the active film completely disappeared after 600 s, which is consistent with our previous reported transient electronics. [34] This transient feature provides a new insight into emerging memory device for data storage security and green electronics.…”

Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

“…The distribution and concentration of additives in the blend memory material has a signicant inuence on the reversibility or volatility of the lm resistor. 16 To date, inorganic nanomaterials, including metal NPs, 17,18 metal oxide NPs, 19,20 suldes, 21,22 and carbon materials, [23][24][25] have been widely investigated as a active layers of RRAM. Among these inorganic nanoparticles, n-type semiconductor ZnO NPs have attracted extensive attention due to their wide band gap (3.37 eV), strong electron mobility ($120 cm 2 V s À1 ), high excitation binding energy (60 meV), high melting point, excellent chemical stability, and good charge carrier transport performance.…”