Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

Abstract

The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior.

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

“…This was because the excessively high CdS concentration will lead to a smaller distance between nanoparticles, so the charge transport requires to overcome the obstacles of CdS NPs, and the switching current ratio begins to decrease. [ 15,41 ] At the same time, compared with the device based on pure PCz‐BB, the threshold voltage V th1 / V th2 of the device based on the PCz‐BB:CdS composite is reduced. This is because the formation of electron transfer path between CdS reduces the activation energy of carrier transport.…”

Dielectric Properties of ZnO-Based Nanocomposites and Their Potential Applications

“…Polymer nanocomposites are used in several electronic applications due to their promising electrical, dielectric, optical, and mechanical properties. Polymer nanocomposites are used in the devices like organic field effect transistors [158][159][160][161], gas sensors [162][163][164][165][166], solar cells [167][168][169][170][171], high power and high storage density capacitors and supercapacitors [172][173][174][175][176][177], electromagnetic interference shielding [178], thermochromic and electrochromic devices [179], electronic antenna [180], optoelectronic devices [181], high capacity memory devices [182], insulating materials [183,184], nanodielectric applications [185,186], and printed circuit board [187][188][189].…”

Bipolar resistive switching properties of TiO x /graphene oxide doped PVP based bilayer ReRAM

“…This device exhibited plenteous potential for NVM due to its exceptional piezo-electric and resistive switching performance. Lot of exploration is ongoing for materials such as zirconium dioxide (ZrO 2 ) [14,15], hafnium oxide (HfO x ) [8,[16][17][18][19], zinc oxide (ZnO) and titanium oxide (TiO x ) [9,20], poly(4-vinylphenol) (PVP) [21], polyvinylpyrrolidone [22], poly(methyl methacrylate) [23], poly(vinyl alcohol) (PVA) [24], polystyrene, surface-supported metal−organic frameworks [25], graphene oxide (GO) [26,27], reduced GO [27], molybdenum disulfide (MoS 2 ) [5,12,[28][29][30], and hexagonal boron nitride (hBN) [31,32] are the few among them. The major key challenges for ReRAM devices that are mostly addressed in the literature are retention, endurance, ON/OFF ratio and operating voltage.…”