Bipolar resistive switching properties of TiO _x /graphene oxide doped PVP based bilayer ReRAM

Abstract

In this paper, firstly, some recently explored materials and processes for resistive random access memory (ReRAM) devices with bipolar switching mechanism along with their performance parameters are discussed. Further, resistive switching behaviour of TiOx/graphene oxide:PVP based bilayer in ReRAM devices is demonstrated. It is found that bipolar resistive switching behaviour is significantly enhanced due to embedding of 2D material such as graphene oxide in the organic polymer. ReRAM devices with Ag/PVP:GO/TiOx/FTO structure exhibited high ON/OFF current ratio (>103), low voltage operation, and high retention time. Bipolar resistive switching from these engineered active layers will have great potential for future large area and sustainable electronics.

Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications

“…Therefore, it is imperative from the above discussion that the resistive switching behavior of the titled device emanates from the trap-controlled space charge limited conduction (SCLC) mechanism. 61,65,66…”

“…In device A, a pristine layer of Zn II L 2 (∼90 nm thick) was used as the switching active layer, and in device B pristine layer of thin TiO 2 (10 nm) layer was used as the switching layer, whereas a bilayer structure consisting a very thin TiO 2 (10 nm) with a Zn II L 2 layer on top was used for device C. Use of thin oxide layers in a hybrid bilayer along with solution-processed soft and organic materials has been a useful technique for performance enhancement in RRAM devices, compared to the devices with pristine layers. 61 The metal oxide and polymer bilayer help to improve the switching ratio, endurance, retention time, and low operating voltage of the device. 62 The device structure of pristine and bilayer devices is shown in Fig.…”

“…Therefore, it is imperative from the above discussion that the resistive switching behavior of the titled device emanates from the trap-controlled space charge limited conduction (SCLC) mechanism. 61,65,66 The memory device Ag/Zn II L 2 /FTO exhibits poor switching characteristics compared to the one in which the metal complex is deposited on a TiO 2 layer (Ag/Zn II L 2 /TiO 2 /FTO). The composite active layer switches the device to the ON-state at a relatively low voltage (V ∼0.5 eV).…”

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

“…Although the memristor-based synaptic device array can lead to faster parallel data processing using VMM, further research is required to minimize its power consumption. However, ReRAM has been studied for memory application [ 16 , 29 ], research on the device operation mechanism [ 29 , 30 , 31 ], and research on ReRAMs composed of materials that are not CMOS-compatible [ 32 , 33 ]. Thus, in this study, a memristor-based 2T synaptic device with a multilayer structure was proposed to reduce the operating power while maintaining high-density integration.…”